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Part: IRFRU9310
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: Power MOSFET ( Vdss=-400v, RDS ( on ) =7.0ohm, Id=-1.8a )
Company: International Rectifier Corp.
Datasheet: Download IRFRU9310 datasheet File size : 178 kB
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Datasheet text preview:
PD 9.1663
PRELIMINARY
l l l l l l
IRFR/U9310
HEXFET® Power MOSFET
D
P-Channel Surface Mount (IRFR9310) Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated
VDSS = -400V
G S
RDS(on) = 7.0 ID = -1.8A
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D -Pa k T O - 2 52 A A I-P a k TO -2 5 1 A A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-1.8 -1.1 -7.2 50 0.40 ± 20 92 -1.8 5.0 -24 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient
Typ.
Max.
2.5 50 110
Units
°C/W
7/30/97
IRFR/U9310
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) V GS(th) gfs IDSS I GSS Qg Q gs Qgd t d(on) tr t d(off) tf LD LS C iss C oss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -400 -2.0 0.91
Typ. -0.41 11 10 25 24 4.5 7.5 270 50 8.0
Max. Units V V/°C 7.0 -4.0 V S -100 µA -500 100 nA -100 13 3.2 nC 5.0 ns nH
pF
Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -1.1A VDS = VGS, I D = -250µA VDS = -50V, I D = -1.1A VDS = -400V, VGS = 0V VDS = -320V, VGS = 0V, TJ = 125°C V GS = 20V VGS = -20V ID = -1.1A VDS = -320V VGS = -10V, See Fig. 6 and 13 VDD = -200V I D = -1.1A RG = 21 RD = 180, See Fig. 10 D Between lead, 6mm (0.25in.) G from package and center of die contact S VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr t on
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol -1.8 showing the A G integral reverse -7.2 p-n junction diode. S -4.0 V TJ = 25°C, IS = -1.1A, VGS = 0V 170 260 ns TJ = 25°C, IF = -1.1A 640 960 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 57mH RG = 25, IAS = -1.8A. (See Figure 12) ISD -1.1A, di/dt 450A/µs, VDD V(BR)DSS, TJ 150°C
Pulse width 300µs; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
IRFR/U9310
10
TOP
-I D , Drain-to-Source Current (A)
BOTTOM
-I D , Drain-to-Source Current (A)
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V
10
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
1
1
-4.5V
-4.5V
0.1
20µs PULSE WIDTH TJ = 25 ° C
1 10 100
0.1
20µs PULSE WIDTH TJ = 150 ° C
1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -1.8A
-I D , Drain-to-Source Current (A)
TJ = 25 ° C TJ = 150 ° C
1
2.0
1.5
1.0
0.5
0.1 4 5 6 7
V DS = -50V 20µs PULSE WIDTH 8 9 10
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( ° C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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