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Part: IRFS11N50ATRL
Category:
Discrete
Description: 500V Single N-channel HexFET Power MOSFET in a D2-Pak Package
Company: International Rectifier Corp.
Datasheet: Download IRFS11N50ATRL datasheet File size : 178 kB
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Datasheet text preview:
PD- 93797
SMPS MOSFET
IRFS11N50A
HEXFET® Power MOSFET
Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching
l
VD S S
500V
Rds(on) max
0.52
ID
11A
Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001)
D 2 Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
11 7.0 44 170 1.3 ± 30 6.9 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Applicable Off Line SMPS Topologies:
l l l
Two Transistor Forward Half & Full Bridge Power Factor Correction Boost
through are on page 8
Notes
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1
9/13/99
IRFS11N5OA
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. 500 2.0
Typ. 0.060
Max. Units V V / ° C 0.52 4.0 V 25 µA 250 100 nA -100
Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 6.6A VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C VGS = 30V VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qg s Qg d t d(on) tr t d(off) tf Ciss C oss Crss C oss C oss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 6.1 Typ. 14 35 32 28 1423 208 8.1 2000 55 97 Max. Units S 52 13 nC 18 ns pF Conditions VDS = 50V, ID = 6.6A ID = 11A VDS = 400V VGS = 10V, See Fig. 6 and 13 VDD = 250V ID = 11A RG = 9.1 RD = 22,See Fig. 10 VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 400V, = 1.0MHz VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Parameter
EAS IAR E AR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
Max.
275 11 17
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
0.50
Max.
0.75 62
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
VSD t rr Qr r ton
Conditions D MOSFET symbol 11 showing the A G integral reverse 44 S p-n junction diode. 1 . 5 V TJ = 25°C, IS = 11A, VGS = 0V 510 770 ns TJ = 25°C, IF = 11A 3 . 4 5 . 1 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFS11N50A
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V B O T T O M 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
4.5V 20µs PULSE WIDTH
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V B O T T O M 4.5V TOP
10
1
0.1 0.1
TJ = 25 °C
1 10 100
4.5V
1 1 10
20µs PULSE WIDTH TJ = 150 °C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
I D = 11A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
10
2.0
TJ = 150 ° C TJ = 25 ° C
1
1.5
1.0
0.5
0.1 4.0
V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
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