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Part: IRFS17N20DTRL
Category:
Discrete
Description: 200V Single N-channel HexFET Power MOSFET in a D2-Pak Package
Company: International Rectifier Corp.
Datasheet: Download IRFS17N20DTRL datasheet File size : 178 kB
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Datasheet text preview:
PD- 93902A
SMPS MOSFET
IRFB17N20D IRFS17N20D IRFSL17N20D
HEXFET® Power MOSFET
l
Applications High frequency DC-DC converters
VD S S
200V
RDS(on) max
0.17
ID
16A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
TO-220AB IRFB17N20D
D2Pak IRFS17N20D
TO-262 IRFSL17N20D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
16 12 64 3.8 140 0.90 ± 30 2.7 -55 to + 175 300 (1.6mm from case ) 10 lbf·in (1.1N·m)
Units
A W W/°C V V/ns °C
Typical SMPS Topologies
l
Telecom 48V input Forward Converter
Notes
through
are on page 11
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1
4/26/00
IRFB/IRFS/IRFSL17N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 3.0 Typ. 0.25 Max. Units V V/°C 0.17 5.5 V 25 µA 250 100 nA -100 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 9.8A VDS = VGS, ID = 250µA VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 150°C VGS = 30V VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qg s Qg d td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 5.3 Typ. 33 8.4 16 11 19 18 6.6 1100 190 44 1340 76 130 Max. Units S 50 13 nC 24 ns pF Conditions VDS = 50V, ID = 9.8A ID = 9.8A VDS = 160V VGS = 10V, VDD = 100V ID = 9.8A RG = 5.1 VGS = 10V VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 160V, = 1.0MHz VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS I AR E AR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
Max.
240 9.8 14
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
0.50
Max.
1.1 62 40
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
VSD trr Qr r ton
Conditions D MOSFET symbol 16 showing the A G integral reverse 64 S p-n junction diode. 1 . 3 V TJ = 25°C, IS = 9.8A, VGS = 0V 160 240 ns TJ = 25°C, IF = 9.8A 900 1350 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFB/IRFS/IRFSL17N20D
100
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V B O T T O M 5.0V TOP
100
I D , Drain-to-Source Current (A)
10
1
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V B O T T O M 5.0V TOP
10
0.1
5.0V
5.0V
20µs PULSE WIDTH TJ = 175 ° C
1 10 100
0.01 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100 1 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.5
I D = 16A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
3.0
TJ = 175 ° C
10
2.5
2.0
TJ = 25 ° C
1
1.5
1.0
0.5
0.1 5.0
V DS = 50V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
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