Details, datasheet, quote on part number: IRFY9140
Description-100V Single P-channel Hi-rel MOSFET in a TO-257AA Package
CompanyInternational Rectifier Corp.
DatasheetDownload IRFY9140 datasheet
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Features, Applications

Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.

Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Glass Eyelets For Space Level Applications Refer to Ceramic Version Part Numbers IRFY9140C, IRFY9140CM

ID @ VGS ID @ VGS = 100C IDM = 25C VGS EAS IAR Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 150 300(0.063in./1.6mm from case for 10 sec) 3.3 (Typical)

BVDSS Drain-to-Source Breakdown Voltage -100 BV DSS T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 6.2 IDSS Zero Gate Voltage Drain Current IGSS Q gd td(on) tr td(off) + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance

Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Input Capacitance Output Capacitance Reverse Transfer Capacitance

IS ISM VSD Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled LS + LD.
RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient

Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page


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