Details, datasheet, quote on part number: IRFZ48NS/L
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionHexFET (r) Power MOSFET: 55v, 64a
CompanyInternational Rectifier Corp.
DatasheetDownload IRFZ48NS/L datasheet


Features, Applications

Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The is a surface mount power package capable of accommodating die sizes HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate in a typical surface mount application. The through-hole version (IRFZ48NL) is available for lowprofile applications.

= 100C IDM PD @TA 25C PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss EAS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 2.0 24 Max. Units Conditions V VGS = 250A V/C Reference 14 m VGS 4.0 V VDS = V GS, 250A S VDS 32A 25 VDS = 55V, VGS A 250 VDS = 44V, VGS 150C 100 VGS nA -100 VGS 19 nC VDS 44V 30 VGS = 10V, See Fig. 6 and 13 VDD = 0.85 VGS = 10V, See Fig. 10 nH Between lead, and center of die contact 1970 VGS 0V 470 VDS = 1.0MHz, See Fig. 190 mJ IAS = 0.37mH Typ.

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Conditions D MOSFET symbol 64 showing the A G integral reverse 210 S p-n junction diode. = 32A, VGS 330 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Pulse width 400s; duty cycle 2%. This is the destructive value not limited to the thermal limit. This is the thermal limited value.

When mounted on 1" square PCB or G-10 Material For recommended soldering techniques refer to application note #AN-994.


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