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Part: IRG4CC81UB
Category:
Description:
Company: International Rectifier Corp.
Datasheet: Download IRG4CC81UB datasheet File size : 180 kB
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Datasheet text preview:
PD- 91825
IRG4CC10KB
IRG4CC10KB IGBT Die in Wafer Form
C
600 V Size 1
G E
Ultra-Fast Speed Short Circuit Rated
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 4.5V Max. 600V Min. 3.0V Min., 6.5V Max. 250µA Max. ± 1.1µA Max. Test Conditions IC = 1.5A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V
Mechanical Data
Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Recommended Die Attach Conditions Reference Standard IR packaged part ( for design ) : IRG4BC10K Cr-NiV-Ag (1 kA-2kA-2.5kA ) 99% Al, 1% Si (4 microns) .080" x .120" 150mm, with std. flat .015" + / -.003" 01-5274 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C
Die Outline
www.irf.com
12\4\98
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