|
|
Part: IRG4IBC20UD
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> Medium Voltage 600-1199 Volts
Description: 600V Ultrafast 8-60 KHZ Copack Igbt in a TO-220 Fullpak Package
Company: International Rectifier Corp.
Datasheet: Download IRG4IBC20UD datasheet File size : 180 kB
Request For quote: Find where to buy IRG4IBC20UD
Datasheet text preview:
PD -91752A
IRG4IBC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
· 2.5kV, 60s insulation voltage U · 4.8 mm creapage distance to heatsink · UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode · IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes · Tighter parameter distribution · Industry standard Isolated TO-220 FullpakTM outline
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
n -c h a n n e l
Benefits
· Simplified assembly · Highest efficiency and power density · HEXFREDTM antiparallel Diode minimizes switching losses and EMI
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C I CM I LM IF @ TC = 100°C IFM Visol VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to CaseU Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 11.4 6.0 52 52 6.5 52 2500 ± 20 34 14 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
RJC RJC RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight
Typ.
2.0 (0.07)
Max.
3.7 5.1 65
Units
°C/W g (oz)
www.irf.com
1
4/24/2000
IRG4IBC20UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Collector-to-Emitter Breakdown VoltageS V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage V(BR)CES Min. 600 Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage Forward TransconductanceT 1.4 Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Typ. 0.69 1.85 2.27 1.87 -11 4.3 1.4 1.3 Max. Units Conditions V VGE = 0V, IC = 250µA V/°C VGE = 0V, IC = 1.0mA 2.1 IC = 6.5A VGE = 15V V IC = 13A See Fig. 2, 5 IC = 6.5A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100V, IC = 6.5A 250 µA VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150°C ±100 nA VGE = ±20V
VGE(th) VGE(th)/TJ g fe ICES VFM IGES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Qg c t d(on) tr t d(off) tf Eon E off E ts t d(on) tr t d(off) tf E ts LE Cies Coes Cres t rr I rr Qr r di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. Typ. 27 4.5 10 39 15 93 110 0.16 0.13 0.29 38 17 100 220 0.49 7.5 530 39 7.4 37 55 3.5 4.5 65 124 240 210 Max. Units 41 6.8 nC 16 ns 140 170 mJ 0.3 ns mJ nH pF 55 ns 90 5.0 A 8.0 138 nC 360 A / µ s Conditions IC = 6.5A VCC = 400V See Fig. 8 VGE = 15V TJ = 25°C IC = 6.5A, VCC = 480V VGE = 15V, RG = 50 Energy losses include "tail" and diode reverse recovery. See Fig. 9, 10, 11, 18 TJ = 150°C, See Fig. 9, 10, 11, 18 IC = 6.5A, VCC = 480V VGE = 15V, RG = 50 Energy losses include "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 = 1.0MHz TJ = 25°C See Fig. TJ = 125°C 14 IF = 8.0A TJ = 25°C See Fig. TJ = 125°C 15 VR = 200V TJ = 25°C See Fig. TJ = 125°C 16 di/dt 200A/µs TJ = 25°C See Fig. TJ = 125°C 17
2
www.irf.com
IRG4IBC20UD
10.0
F o r both:
8.0
LOAD CURRENT (A)
D u t y cy c l e : 50% TJ = 125°C T s i n k = 90°C G a t e drive as specified P o w e r Dis s i p a t i o n = 9.5 W
S q u a re w a v e : 6 0 % of rate d volta g e
6.0
4.0
I
2.0
Id e a l d io d e s
0.0 0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
T J = 25°C T J = 150°C
10
I C , C o l l e c t o r - t o - E m i tt e r C u r r e n t (A )
I C , Collector-to-Emitter Current (A)
10
TJ = 1 5 0 ° C
TJ = 25 ° C
1
1
0.1 0.1 1
V G E = 15V 2 0 µ s PULSE WIDTH
10
0.1 4 6 8
V C C = 10 V 5 µ s P U L S E W ID T H
10
A
12
VC E , Collector-to-Emitter Voltage (V)
VG E , Ga te - t o - E m i tt e r Volta g e (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
www.irf.com
A
3
Others parts begin by ir
IR-1 IR-2 IR-3 IR-4 IR-5 IR-6 IR-7 IR-8 IR-9 IR-10 IR-11 IR-12 IR-13 IR-14 IR-15 IR-16 IR-17 IR-18 IR-19 IR-20 IR-21 IR-22 IR-23 IR-24 IR-25 IR-26 IR-27 IR-28 IR-29 IR-30 IR-31
|
|
|
