Details, datasheet, quote on part number: IRGBC40M
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Medium Voltage 600-1199 Volts
TitleMedium Voltage 600-1199 Volts
DescriptionShort Circuit Rated Fast Igbt Insulated Gate Bipolar Transistor
CompanyInternational Rectifier Corp.
DatasheetDownload IRGBC40M datasheet
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Features, Applications


Short circuit rated @ 125C, VGE = 15V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency to 10kHz)


Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

VCES = 100C ICM ILM tsc VGE EARV 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, or M3 screw.

RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight

Min. Typ. Max. Units Conditions 600 V VGE 20 V VGE 1.0A 0.70 V/C VGE = 24A VGE = 150C Gate Threshold Voltage 3.0 5.5 VCE = VGE, = 250A Temperature Coeff. of Threshold Voltage -12 mV/C VCE = VGE, 12 S VCE = 24A Forward Transconductance Zero Gate Voltage Collector Current 250 A VGE = 0V, VCE 600V 1000 VGE = 0V, VCE = 150C Gate-to-Emitter Leakage Current 100 nA VGE = 20V

Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage

Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. VGE=20V, L=10H, RG= 10 Min. 10 Typ. Max. Units Conditions 10 nC VCC 25 42 VGE = 24A, VCC 240 410 VGE 15V, RG Energy losses include "tail" 3.6 s VCC = 125C VGE = 10, VCPK = 24A, VCC 480V 380 VGE 10 460 Energy losses include "tail" 7.5 nH Measured 5mm from package 1500 VGE 190 pF VCC = 1.0MHz Pulse width 5.0s, single shot.

Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%.

Refer to Section D for the following: Package Outline 1 - JEDEC Outline TO-220AB


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