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Details, datasheet, quote on part number:IRHLUB770Z4
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Datasheet text preview:
PD - 95813A
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
Product Summary
Part Number Radiation Level RDS(on) IRHLUB770Z4 100K Rads (Si) 0.55 IRHLUB730Z4 300K Rads (Si) 0.55 ID 0.8A 0.8A
IRHLUB770Z4 60V, N-CHANNEL
TECHNOLOGY
UB
I n t e r n a t i o n a l Rectifier's R7 T M Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in s p a c e and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. T h e s e devices are used in applications such as c u r r e n t boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLUB7970Z4 n Available on Tape & Reel
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current ID M PD @ TC = 25°C VGS EAS IA R EAR dv/dt TJ TS T G Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 0.8 0.5 3.2 0.6 0.0045 ±10 2.0 0.8 0.06 4.0 -55 to 150 300 (for 5s) 43 (Typical)
Pre-Irradiation
Units A
W
W/°C
V mJ A mJ V/ns
o
C
mg
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1
09/03/04
IRHLUB770Z4
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage
Min
60
Typ Max Units
-- 0.07 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.4 -- -- 0.55 2.0 -- 1.0 10 100 -100 3.6 1.5 1.8 8.0 10 26 10 -- V V/°C V S( ) µA
Test Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 4.5V, ID = 0.5A Ã
IG S S IG S S Qg Qgs Qg d td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
-- -- -- -- -- -- -- -- -- --
nA nC
ns
nH
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
166 42 3.5 12
-- -- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QR R ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 0.8 3.2 1.2 70 75
A
V ns nC Tj = 25°C, IS = 0.8A, VGS = 0V Ã Tj = 25°C, IF = 0.8A, di/dt 100A/µs VDD 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
Rt h J A Junction-to-Case
Min Typ Max Units
-- -- 220
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
2
B V D S S / T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage 1.0 g fs Forward Transconductance 0.23 IDSS Zero Gate Voltage Drain Current -- --
VDS = VGS, ID = 250µA VDS = 10V, IDS = 0.5A Ã VDS= 48V ,VGS= 0V VDS = 48V, VGS = 0V, TJ =125°C VGS = 10V VGS = -10V VGS = 4.5V, ID = 0.8A VDS = 30V VDD = 30V, ID = 0.8A, VGS = 4.5V, RG = 24
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 5.0MHz, open drain
Test Conditions
Test Conditions
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R e- ia i diation PradIrrtaon Characteristics
IRHLUB770Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-state Resistance (UB) Diode Forward Voltage Upto 300K Rads (Si)1
Min
60 1.0 -- -- -- -- -- --
Max
Units
V nA µA V
Test Conditions
VGS = 0V, ID = 250µA VGS = VDS, ID = 250µA VGS = 10V VGS = -10V VDS= 48V, VGS=0V VGS = 4.5V, ID = 0.5A VGS = 4.5V, ID = 0.5A VGS = 0V, ID = 0.8A
-- 2.0 100 -100 1.0 0.55 0.55 1.2
1. Part numbers IRHLUB770Z4, IRHLUB730Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion L ET
(MeV/(mg/cm2)) Br I Au 37.3 59.9 82.3
Energy
(MeV) 285 345 357
Range
(µm) 36.8 32.7 28.5 0V 60 60 60 -2V 60 60 60 -4V 60 60 60 -5V 60 60 60
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-6V 60 60 -
-7V 35 20 -
-8V 30 15 -
-10V 20 -
70 60 50 40 30 20 10 0 0 -2 -4 -6 VGS -8 -10 -12
Br I Au
For footnotes refer to the last page
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VDS
Fig a. Single Event Effect, Safe Operating Area
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