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Details, datasheet, quote on part number:IRHM7064
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| Part: | IRHM7064 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | HexFET Transistor |
| Company: | International Rectifier Corp. |
| Datasheet: | Download IRHM7064 datasheet File size : 275 kB |
| Request For quote: | Find where to buy IRHM7064
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Datasheet text preview:
PD - 91564D
R A D I A T I O N HARDENED P O W E R MOSFET THRU-HOLE (T0-254AA) T H R U - H O L E (T0-254AA)
P r o d u c t Summary
P a r t Number Radiation Level IRHM7064 100K Rads (Si) IRHM3064 300K Rads (Si) IRHM4064 600K Rads (Si) IRHM8064 1000K Rads (Si)
IRHM7064 JANSR2N7431 6 0 V , N-CHANNEL REF:MIL-PRF-19500/663
RAD Hard HEXFET TECHNOLOGY HEXFET TECHNOLOGY
®
RDS(on) QPL Part Number R DS(on) ID 0.021 35*A JANSR2N7431 0.021 35*A JANSF2N7431 0.021 35*A JANSG2N7431 0.021 35*A JANSH2N7431
TO-254AA
International Rectifiers RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
HEXFET® technol-
Features:
! ! ! ! ! ! ! ! !
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings Absolute
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C V GS EAS IAR EAR dv/dt TJ TS T G Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page *Current is limited by pin diameter 35* 35 284 250 2.0 ±20 500 35 25 2.5 -55 to 150
Pre-Irradiation
Units A
W
W/°C
V mJ A mJ V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical )
g
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IRHM7064
Pre-Irradiation
@ Tj = 25°C (Unless Otherwise Specified) Min
60 2.0 18
Electrical Characteristics
Parameter
BVDSS
Typ M a x U n i t s
0.056 6.8 0.021 4.0 25 250 100 -100 270 60 110 27 120 120 100 V V/°C V S( ) µA
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 30V VDD =30V, ID = 35A VGS =12V, RG = 2.35
Drain-to-Source Breakdown Voltage
BV DSS / T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
I GSS I GSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns nH
Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from
Package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
4900 2800 860
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
M i n Typ M a x U n i t s
35* 284 1.5 360 3.1
Test Conditions
A
V nS µC Tj = 25°C, IS = 35A, VGS = 0V Tj = 25°C, IF = 35A, di/dt 100A/µs VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current is limited by pin diameter
Thermal Resistance
Parameter
R thJC R thJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
M i n Typ M a x U n i t s
0.50 48 0.21
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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R a d a o n Characteristics P r e -iI rtria d i a t i o n
IRHM7064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table
Parameter
Min 60 2.0
100K Rads(Si)
Max
300 - 1000K Rads (Si)
Min
Max
Units Units V nA µA V
Test Conditions
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" On-State Resistance (TO-3) Static Drain-to-Source" On-State Resistance (TO-254AA) Diode Forward Voltage"
4.0 100 -100 25 0.021 0.021 1.5
60 1.25
4.5 100 -100 50 0.031 0.031 1.5
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=48V, VGS =0V VGS = 12V, ID =35A VGS = 12V, ID =35A VGS = 0V, IS = 35A
1. Part numbers IRHM7064 2. Part number IRHM3064, IRHM4064 and IRHM8064
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion I Br LET MeV/(mg/cm )) 59.9 36.8 Energy Range VDS(V) (MeV) (µm) @V @VGS=0V@VGS=-5V@VGS=-10V@VGS=-15V @VGS=-20V 345 32.8 60 60 45 40 30 305 39 40 35 30 25 20
80 60 VDS 40 20 0 0 -5 -10 VGS -15 -20
BR I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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