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Details, datasheet, quote on part number:IRHM7450
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| Part: | IRHM7450 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 500V 100kRad Hi-rel Single N-channel Tid Hardened MOSFET in a TO-254AA Package |
| Company: | International Rectifier Corp. |
| Datasheet: | Download IRHM7450 datasheet File size : 319 kB |
| Request For quote: | Find where to buy IRHM7450
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Datasheet text preview:
PD - 90673A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
500Volt, 0.45, MEGA RAD HARD HEXFET
I n t e r n a t i o n a l Rectifier's RAD HARD technology HEXFETs demonstrate excellent threshold voltage s t a b i l i t y and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Inter national Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverte r s , choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270
N CHANNEL
MEGA RAD HARD
Product Summary
Part Number IRHM7450 IRHM8450 BVDSS 500V 500V RDS(on) 0.45 0.45 ID 11A 11A
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C ID M PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight 11 7.0 44 150 1.2 ±20 500 11 15 3.5 -55 to 150
Pre-Irradiation
IRHM7450, IRHM8450 Units A
W
W/°C
V mJ A mJ V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10s) 9.3 (typical)
g
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1
02/01/99
IRHM7450, IRHM8450, JANSR-, JANSH-, 2N7270 Devices
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
500 -- -- -- 2.0 4.0 -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 -- -- 0.45 0.50 4.0 -- 50 250 100 -100 150 30 75 45 190 190 130 -- -- V V/°C V S( ) µA
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 7.0A VGS = 12V, ID = 11A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 7.0A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 11A VDS = Max Rating x 0.5 VDD = 250V, ID = 11A, RG = 2.35
IGSS IGSS Qg Qgs Qg d td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nA nC
ns
nH
Measured from drain M o d i f i e d MOSFET symlead, 6mm (0.25 in) bol showing the internal from package to center i n d u c t a n c e s . of die. Measured from source lead, 6mm (0.25 in) from package to so u rce bonding pad.
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
4000 330 52
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD tr r QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 11 44 1.6 1100 16
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS =11A, VGS = 0V Tj = 25°C, IF = 11A, di/dt 100A/µs VDD 50V
A
V ns µC
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Min Typ Max
-- -- -- -- 0.83 -- 48 0.21 --
Units
°C/W
Test Conditions
Typical socket mount
2
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Radiation Characteristics
IRHM7450, IRHM8450, JANSR-, JANSH-, 2N7270 Devices
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier comprises three radiation environments. Every manufacturing lot is tested in a low dose rate ( t o t a l dose) environment per MIL-STD-750, test method 1019 condition A. International Rectifier has imposed a standard gate condition of 12 volts per note 6 and a VDS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post- irradiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHM7450. Post-irradiation limits of the devices irradiated to 1 x 106 Rads (Si) are presented in Table 1, column 2, IRHM8450. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/Sec (See Table 2). International Rectifier radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD
IRHM7450 IRHM8450
100K Rads (Si) 1000K Rads (Si) Units
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS=0.8 x Max Rating, VGS =0V VGS = 12V, ID = 7.0A TC = 25°C, IS =11A,VGS = 0V
Min Drain-to-Source Breakdown Voltage 500 Gate Threshold Voltage 2.0 Gate-to-Source Leakage Forward -- Gate-to-Source Leakage Reverse -- Zero Gate Voltage Drain Current -- Static Drain-to-Source -- On-State Resistance One Diode Forward Voltage --
Max -- 4.0 100 -100 50 0.45 1.6
Min 500 1.25 -- -- -- -- --
Max -- 4.5 100 -100 50 0.6 1.6 V nA µA V
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
V DSS IPP di/dt L1 Drain-to-Source Voltage
Min Ty p Max Min Ty p Max Units Test Conditions -- -- 400 -- -- 400 V Applied drain-to-source voltage during gamma-dot -- 8 -- -- 8 -- A Peak radiation induced photo-current -- -- 15 -- -- 3 A/µsec Rate of rise of photo-current 27 -- -- 133 -- -- µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
3x 105
Range (µm)
~41
VDSBias (V)
275
VGS Bias (V)
-5
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