|
Details, datasheet, quote on part number:IRHM7Z60
| |
| Part: | IRHM7Z60 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Repetitive Avalanche And Dv/dt Rated HexFET(r) Transistor 30v 35a: 30v, 35a |
| Company: | International Rectifier Corp. |
| Datasheet: | Download IRHM7Z60 datasheet File size : 125 kB |
| Request For quote: | Find where to buy IRHM7Z60
|
| |
Datasheet text preview:
PD - 91701B
R A D I A T I O N HARDENED P OW E R MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si) RDS(on) 0.014 0.014 0.014 0.014 ID 35*A 35*A 35*A 35*A
IRHM7Z60 30V, N-CHANNEL
RAD-Hard HEXFET TECHNOLOGY
TM ®
TO-254AA
Inter national Rectifier's RAD-Hard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET® technol-
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C ID M PD @ TC = 25°C VGS EAS IA R EAR dv/dt TJ TS T G Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page *Current is limited by internal wire diameter 35* 35* 140 250 2.0 ±20 500 35 25 0.35 -55 to 150
Pre-Irradiation
Units A
W
W/°C
V mJ A mJ V/ns
o
C
300 ( 0.063 in. (1.6mm) from case for 10s) 9.3 (Typical )
g
www.irf.com
1
12/20/01
IRHM7Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
30 -- -- 2.0 21 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.02 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.014 4.0 -- 25 250 100 -100 421 104 115 32 370 177 280 -- V V/°C V S( ) µA
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 15V VDD =15V, ID = 35A VGS =12V, RG = 2.35
IG S S IG S S Qg Qgs Qg d td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
7000 4800 1800
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM V SD trr QRR to n Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 35* 140 1.5 220 930
Test Conditions
A
V nS µC Tj = 25°C, IS = 35A, VGS = 0V Tj = 25°C, IF = 35A, di/dt 100A/µs VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current is limited by the internal wire diameter
Thermal Resistance
Parameter
R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.50 0.21 -- -- 48
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
www.irf.com
Rre-iIarionation Pad r tadi Characteristics
IRHM7Z60
Inter national Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Ever y manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254AA) Diode Forward Voltage
100K Rads(Si)1
300 - 1000K Rads (Si)2
Units V nA µA V
Test Conditions
VGS = 12V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=24V, VGS =0V VGS = 12V, ID =15A VGS = 12V, ID =15A VGS = 0V, IS = 35A
Min 30 2.0 -- -- -- -- -- --
Max -- 4.0 100 -100 25 0.014 0.014 1.5
Min 30 1.25 -- -- -- -- -- --
Max -- 4.5 100 -100 50 0.035 0.035 1.5
1. Part number IRHM7Z60 2. Part numbers IRHM3Z60, IRHM4Z60 and IRHM8Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET MeV/(mg/cm²)) 36.8 59.9 80.3 Energy (MeV) 305 345 313 Range (µm) @VGS=0V Br I AU 39 32.8 26.5 30 25 22.5 @VGS=-5V 30 25 22.5 VDS(V) @VGS=-10V 30 20 15 @VGS=-15V 25 15 10 @VGS=-20V 20 10 _
35 30 25 VDS 20 15 10 5 0 0 -5 - 10 VGS - 15 - 20 Br I AU
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
|
|
