Details and datasheet on part: IRHY54230CM


Part:	IRHY54230CM
Category:	Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description:	Radiation Hardened Power MOSFET Thru-hole (to-257aa): 200v, 13a
Company:	International Rectifier Corp.
Datasheet:	Download IRHY54230CM datasheet File size : 122 kB
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Datasheet text preview:
PD - 93827A
RADIATION HARDENED P OW E R MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level IRHY57230CM 100K Rads (Si) IRHY53230CM 300K Rads (Si) IRHY54230CM 600K Rads (Si) IRHY58230CM 1000K Rads (Si) RDS(on) 0.21 0.21 0.21 0.26 ID 12.5A 12.5A 12.5A 12.5A
IRHY57230CM 200V, N-CHANNEL
4#
TECHNOLOGY
c
TO-257AA
Inter national Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC conver ters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C ID M PD @ TC = 25°C VGS EAS IA R EAR dv/dt TJ TS T G Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 12.5 8.0 50 75 0.6 ±20 60 12.5 7.5 4.4 -55 to 150
Pre-Irradiation
Units A
W
W/°C
V mJ A mJ V/ns
o
C
300 (0.063in./1.6mm from case for 10sec) 4.3 ( Typical )
g
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1/30/2001
IRHY57230CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RD S ( o n ) Static Drain-to-Source On-State Resistance VG S ( t h ) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
200 -- -- 2.0 10 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.26 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.21 4.0 -- 10 25 100 -100 50 7.4 20 25 100 35 30 -- V V/°C V S( ) µA
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 8.0A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 8.0A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 12.5A VDS = 100V VDD = 100V, ID = 12.5A, VGS =12V, RG = 7.5
IG S S IG S S Qg Qgs Qg d td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz
Ci s s Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1043 190 20
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QR R ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 12.5 50 1.2 343 2.25
Test Conditions
A
V ns µC Tj = 25°C, IS = 12.5A, VGS = 0V Tj = 25°C, IF = 12.5A, di/dt 100A/µs VDD 25V
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Rt h J A Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 80
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics
IRHY57230CM
Inter national Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Ever y manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-257AA) Diode Forward Voltage Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 200 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.215 0.21 1.2 200 1.5 -- -- -- -- -- -- -- 4.0 100 -100 10 0.265 0.26 1.2 V nA µA V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID = 8.0A VGS = 12V, ID = 8.0A VGS = 0V, IS = 12.5A
1. Part numbers IRHY57230CM, IRHY53230CM and IRHY54230CM 2. Part number IRHY58230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.4 82.3 Energy (MeV) 309 341 350 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 200 200 150 150 50 32.5 200 200 40 35 30 28.4 50 35 25 -- --
250 200 VDS 150 100 50 0 0 -5 - 10 VGS - 15 - 20 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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