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Part: IRKL142/14
Category:
Discrete
Description: 1400V 140A Doubler Circuit Positive Phase Control Thyristor/diode in a Int-a-pak Package
Company: International Rectifier Corp.
Datasheet: Download IRKL142/14 datasheet File size : 235 kB
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Datasheet text preview:
Bulletin I27117 rev. C 03/02
SERIES IRK.136, .142, .162
THYRISTOR/DIODE and THYRISTOR/THYRISTOR Features
H i g h Voltage E l e c t r i c a l l y Isolated by DBC Ceramic ( Al 2 O 3 ) 3 5 0 0 V R M S Isolating Voltage I n d u s t r i a l Standard Package H i g h Surge Capability G l a s s Passivated Chips M o d u l e s uses High Voltage Power thyristor/diodes i n three Basic Configurations S i m p l e Mounting UL E78996 approved
NEW INT-A-pak Power Modules
135 A 140 A 160 A
Applications
D C Motor Control and Drives B a t t e r y Charges Welders P o w e r Converters L i g h t i n g Control H e a t and Temperature Control
Major Ratings and Characteristics
Parameters
I T(AV) @ TC I T(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz I2t VRRM TJ range
CASE STYLE NEW INT-A-PAK
IRK.136.. IRK.142.. IRK.162.. Units
135 85 300 3200 3360 51.5 47 515.5 140 85 310 4500 4712 102 92.5 1013 400 to 1600 - 40 to 125 160 85 355 4870 5100 119 108 1190 A °C A A A KA2s KA2s KA2s V °C
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IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
Electrical Specifications
Voltage Ratings
Type number Voltage VRRM/VDRM , Maximum repetitive VRSM/VDSM, Maximum non-repetitive Code peak reverse voltage peak reverse voltage V V
04 08 12 14 16 400 800 1200 1400 1600 500 900 1300 1500 1700
IRRM / IDRM @ 125°C mA
50
IRK.136 IRK.142 IRK.162
Forward Conduction
Parameter
IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Maximum peak, one-cycle on-state, non-repetitive surge current
IRK.136
135 85 300 3200 3360 2700 2800
IRK.142
140 85 310 4500 4712 3785 3963 102 92.5 71.6 65.4 1013 0.83 1 1.78 1.43 1.55
IRK.162
160 85 355 4870 5100 4100 4300 119 108 84 76.7 1190 0.8 0.98 1.67 1.38 1.54
Units Conditions
A °C A A as AC switch t = 10ms No voltage 180° conduction, half sine wave
t = 8.3ms reapplied t = 10ms 100% VRRM Sine half wave, Initial TJ = TJ max. No voltage
t = 8.3ms reapplied KA2s t = 10ms
I2t
Maximum I2t for fusing
51.5 47 36.5 33.3
t = 8.3ms reapplied t = 10ms 100% VRRM
t = 8.3ms reapplied KA2s t = 0.1 to 10ms, no voltage reapplied V (16.7% x x IT(AV) x IT(AV)), @ TJ max. m (16.7% x x IT(AV) x IT(AV)), @ TJ max. V IT M = x IT(AV), TJ = 25°C, 180°conduction Anode supply = 6V initial IT = 30A, TJ = 25°C Anode supply = 6V resistive load = 1 Gate pulse: 10V, 100µs, TJ = 25°C
I2t
Maximum I2t for fusing voltage
515.5 0.86 1.05 2.02 1.65 1.57
VT(TO)1 Low level value of threshold VT(TO)2 High level value of threshold voltage rt1 rt2 VTM IH IL Low level value on-state slope resistance High level value on-state slope resistance Maximum forward voltage drop
Maximum holding current Maximum latching current
200 400
mA mA
Switching
tgd tgr tq Typical delay time Typical rise time Typical turn-off time 1 2 50 - 200 µs TJ = 25oC TJ = 25 C
o
Gate Current=1A dIg/dt=1A/µs Vd=0,67% VDRM
ITM = 300 A; -dI/dt = 15 A/µs; TJ = TJ max Vr = 50 V; dV/dt = 20 V/µs; Gate 0 V, 100
2
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IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02 Blocking
IRRM IDRM VINS Maximum peak reverse and off-state leakage current RMS isolation voltage 3500 1000 V V/µs 50Hz, circuit to base, all terminals shorted, t = 1s TJ = TJ max., exponential to 67% rated VDRM 50 mA TJ = 125oC
dV/dt critical rate of rise of off-state voltage
Triggering
Parameter
PGM IGM -VGT VGT Max. peak gate power
IRK.136
IRK.142
12 3 3 10 4 2.5 1.7 270 150 80 0.3 10 300
IRK.162
Units Conditions
W W A V V TJ = - 40°C TJ = 25°C TJ = TJ max. TJ = - 40°C mA V mA A/µs @ TJ = TJ max., ITM = 400A rated VDRMapplied TJ = 25°C Anode supply = 6V, resistive load; Ra = 1 Anode supply = 6V, resistive load; Ra = 1 tp 5ms, TJ = TJ max. f=50Hz, TJ = TJ max. tp 5ms, TJ = TJ max.
PG(AV) Max. average gate power Max. peak gate current Max. peak negative gate voltage Max. required DC gate voltage to trigger IGT Max. required DC gate current to trigger VGD IGD di/dt Max. gate voltage that will not trigger Max. gate current that will not trigger Max. rate of rise of turned-on current
TJ = TJ max. @ TJ = TJ max., rated VDRM applied
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T wt Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting IAP to heatsink torque ± 10% busbar to IAP Approximate weight Case Style 0.18
IRK.136
IRK.142
-40 to 125 -40 to 150 0.18 0.05 4 to 6 4 to 6 200 (7.1)
IRK.162
Units Conditions
°C °C
0.16
K/W K/W Nm g(oz)
DC operation, per junction Mounting surface smooth, flat and greased Per module
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads.
New Int-A-Pak
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
IRK.136 IRK.142 IRK.162
Sinusoidal conduction @ TJ max.
180o 0.007 0.0019 0.0030 120o 0.01 0.0019 0.0031 90o 0.013 0.0020 0.0032 60o 0.0155 0.0020 0.0033 30o 0.017 0.0021 0.0034 180o 0.009 0.0018 0.0029
Rectangular conduction @ TJ max.
120o 0.012 0.0022 0.0036 90o 0.014 0.0023 0.0039 60o 0.015 0.0023 0.0041 30o 0.017 0.0020 0.0040
Units
K/W
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