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Part: IRKL170-04
Category:
Discrete
Description: 400V 170A Doubler Circuit Positive Phase Control Thyristor/diode in a Magn-a-pak Package
Company: International Rectifier Corp.
Datasheet: Download IRKL170-04 datasheet File size : 235 kB
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Datasheet text preview:
Bulletin I27102 rev. C 05/02
IRK. SERIES
SCR / SCR and SCR / DIODE Features
H i g h voltage E l e c t r i c a l l y isolated base plate 3 0 0 0 V R M S isolating voltage I n d u s t r i a l standard package S i m p l i f i e d mechanical designs, rapid assembly H i g h surge capability L a r g e creepage distances UL E78996 approved
MAGN-A-pak Power Modules
170A 230A 250A
Description
T h i s new IRK serie of MAGN-A-paks modules uses high v o l t a g e power thyristor/thyristor and thyristor/diode in s e v e n basic configurations. The semiconductors are e l e c t r i c a l l y isolated from the metal base, allowing comm o n heatsinks and compact assemblies to be built. They c a n be interconnected to form single phase or three p h a s e bridges or as AC-switches when modules are c o n n e c t e d in anti-parallel mode. T h e s e modules are intended for general purpose applic a t i o n s such as battery chargers, welders and plating e q u i p m e n t and where high voltage and high current are r e q u i r e d (motor drives, U.P.S., etc.).
Major Ratings and Characteristics
Parameters
IT(AV) @ 85°C I T(RMS) ITSM It
2
IRK.170.. 170 377
IRK.230.. IRK.250.. Units 230 510 7500 7850 280 256 2800 250 555 8500 8900 361 330 3610 A A A A KA2s KA2s KA2s V
o
@ 50Hz @ 60Hz @ 50Hz @ 60Hz
5100 5350 131 119 1310
I t VDRM / VRRM TJ range
2
Up to1600 Up to 2000 Up to1600 -40 to 130
C
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IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code VRRMVDRM , maximum repetitive peak reverse and off-state blocking voltage V
400 800 1200 1400 1600 800 1200 1600 1800 2000
VRSM , maximum non-repetitive peak reverse voltage V
500 900 1300 1500 1700 900 1300 1700 1900 2100
IRRM IDRM max @ 130°C mA
50
IRK.170IRK.250-
04 08 12 14 16 08 12 16 18 20
IRK.230-
50
On-state Conduction
Parameters
IT(AV) Maximum average on-state current @ Case temperature IT(RMS) Maximum RMS on -state current ITSM Maximum peak, one-cycle on-state, non-repetitive surge current IRK.170 IRK.230 IRK.250 Units Conditions 170 85 377 5100 5350 4300 4500 I2t Maximum I2t for fusing 131 119 92.5 I2t Maximum I2t for fusing 84.4 1310 0.89 1.12 1.34 0.96 1.60 500 1000 230 85 510 7500 7850 6300 6600 280 256 198 181 2800 1.03 1.07 0.77 0.73 1.59 500 1000 250 85 555 8500 8900 7150 7500 361 330 255 233 3610 0.97 1.00 0.60 0.57 1.44 500 1000 V A
o
180o conduction, half sine wave as AC switch t = 10ms No voltage t = 8.3ms reapplied t = 10ms 100% VRRM Sinusoidal half wave, No voltage initial TJ = TJ max t = 8.3ms reapplied
C
A A
KA2s t = 10ms
t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2s t = 0.1 to 10ms, no voltage reapplied V (16.7% x x IT(AV) x IT(AV)), TJ = TJ max. m (16.7% x x IT(AV) x IT(AV)), TJ = TJ max. ITM = x IT(AV), TJ = TJ max., 180o conduction Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2
VT(TO)1Low level value of threshold voltage VT(TO)2High level value of threshold voltage rt 1 rt 2 VTM IH IL Low level on-state slope resistance High level on-state slope resistance Maximum on-state voltage drop Maximum holding current Maximum latching current
mA Anode supply=12V, initial IT=30A, TJ=25oC Anode supply=12V, resistive load=1 gate pulse: 10V, 100µs, TJ = 25°C
Switching
Parameters
td tr tq Typical delay time Typical rise time Typical turn-off time IRK.170 IRK.230 IRK.250 Units Conditions 1.0 2.0 50 - 150 µs µs TJ = 25oC, Gate Current=1A dIg/dt=1A/ µ s Vd = 0,67% VDRM ITM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ; Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
2
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IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
Blocking
Parameters
IRRM Max. peak reverse and off-state IDRM leakage current VINS RMS isolation voltage dv/dt Critical rate of rise of off-state voltage 3000 1000 V 50Hz, circuit to base, all termin. shorted, 25°C,1s V/µ s TJ = TJ max, exponential to 67% rated VDRM IRK.170 IRK.230 IRK.250 Units Conditions 50 mA TJ =TJ max.
Triggering
Parameters
I PGM
IRK.170 IRK.230 IRK.250 Units Conditions 10.0 2.0 3.0 5.0 4.0 3.0 2.0 350 200 100 W W A V V V V mA mA mA V tp 5ms, f = 50Hz, tp 5ms, tp 5ms, TJ = - 40 C
o
Maximum peak gate power
TJ = TJ max. TJ = TJ max. TJ = TJ max. TJ = TJ max. Anode supply = 12V, resistive load ; Ra = 1 Anode supply = 12V, resistive load ; Ra = 1
PG(AV) Maximum average gate power +IGM -VGT VGT Maximum peak gate current Max. peak negative gate voltage Maximum required DC gate voltage to trigger IGT Maximum required DC gate current to trigger VGD IGD d i /d t Maximum gate voltage that will not trigger Maximum gate current that will not trigger Max rate of rise of turned-on current
TJ = 25oC TJ = TJ max. TJ = - 40oC TJ = 25oC TJ = TJ max.
0.25 10.0 500
@ TJ= TJ max., rated VDRM applied
mA @ TJ= TJ max., rated VDRM applied A/µs @ TJ= TJ max., ITM = 400 A rated VDRM applied
Thermal and Mechanical Specifications
Parameters
TJ Tstg Junction operating temperature Storage temperature range junction to case RthC-S Thermal resistance, case to heatsink T Mounting tourque ±10% MAP to heatsink Busbar to MAP wt Approximate weight Case style 4 to 6 4 to 6 500 17.8 MAGN-A-pak 0.17 0.02 IRK.170 IRK.230 IRK.250 Units Conditions -40 to 130 -40 to 150 0.125 0.02 0.125 0.02
o o
C C
RthJC Maximum thermal resistance
K / W Per junction, DC operation K/W Mounting surface flat, smooth and greased (per module) A mounting compound is recommended and the Nm tourque should be rechecked after a period of Nm about 3 hours to allow for the spread of the compound g oz
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