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Details, datasheet, quote on part number:IRKTF200-08HK
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Datasheet text preview:
Bulletin I27099 rev. C 03/01
IRK.F200.. SERIES
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR MAGN-A-pak Power Modules
Features
F a s t turn-off thyristor F a s t recovery diode H i g h surge capability E l e c t r i c a l l y isolated baseplate 3 0 0 0 V R M S isolating voltage I n d u s t r i a l standard package UL E78996 approved
200 A
Description
T h e s e series of MAGN-A-pak modules are intended for a p p l i c a t i o n s such as self-commutated inverters, DC c h o p p e r s , electronic welders, induction heating and o t h e r s where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM
2
IRK.F200..
200 85 444
Units
A °C A A A K A 2s K A 2s KA 2 s µs µs V
o
@ 50Hz @ 60Hz
7600 8000 290 265 2900 20 and 25 2 up to 1200 - 40 to 125
It
@ 50Hz @ 60Hz
I2t tq t rr VDRM / VRRM TJ range
C
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
08 IRK.F20012
VRRM/VDRM, maximum repetitive peak reverse voltage V
800 1200
VRSM , maximum nonrepetitive peak rev. voltage V
800 1200
IRRM/I DRM max.
@ T J = 125°C
mA
50
Current Carrying Capacity
ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 85 10 /0.47µF 380 460 310 250 180 50 8 0 %VDRM 50 60 85 10 /0.47µF 560 690 450 360 280 50
o
Frequency f
ITM 180 el
o
ITM 100µs
Units
630 710 530 410 300 50
850 1060 760 560 410 50
2460 1570 630 410 50 8 0 %VDRM
3180 2080 860 560 50
A A A A A V V A/ µs °C
8 0 %VDRM 60
85 10 /0.47µF
60
On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Maximum average on-state current @ Case temperature Maximum RMS current Maximum peak, one-cycle, non-repetitive surge current
IRK.F200..
200 85 444 7600 8000 6400 6700
Units Conditions
A °C A A as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 1 0 0 % VR R M reapplied Sinusoidal half wave, Initial TJ = 125°C 180° conduction, half sine wave
I2t
Maximum I2 t for fusing
290 265 205 187
I2 t
Maximum I2 t for fusing
2900 1.18 1.25 0.74 0.70 1.73 600 1000
KA2s t = 0 to 10ms, no voltage reapplied V (16.7% x x I T(AV) x IT(AV) ), TJ = TJ max. mW (16.7% x x I T(AV) x IT(AV) ), TJ = TJ max. V mA mA Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse TJ = 25°C, IT > 30 A TJ = 25°C, VA = 12V, Ra = 6, Ig = 1A
VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage rt1 rt2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current
2
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
Switching
Parameter
di/dt Maximum non-repetitive rate of rise
IRK.F200..
800
Units Conditions
A/µs Gate drive 20V, 20, tr 1ms, VD= 80% VDRM T J = 25°C ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 750A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM
trr tq
Maximum recovery time Maximum turn-off time K 20
2 J 25
µs
Blocking
Parameter
dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM I DRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 50 V mA 50 Hz, circuit to base, TJ = 25°C, t = 1 s TJ = 125°C, rated VDRM/VRRM applied
IRK.F200..
1000
Units Conditions
V/µs TJ = 125°C., exponential to = 67% VDRM
Triggering
Parameter
P GM P G(AV) IGM - VG M IGT V GT IG D V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger
IRK.F200..
60 10 10 5 200 3 20 0.25
Units Conditions
W W A V mA V mA V TJ = 125°C, rated VDRM applied TJ = 25°C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125°C, f = 50Hz, d% = 50 TJ = 125°C, tp < 5ms
Thermal and Mechanical Specifications
Parameter
TJ T stg R thJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case R thC-hs Max. thermal resistance, case to heatsink T Mounting torque ± 10% MAP to heatsink busbar to MAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.025 K/W Mounting surface flat and greased Per module
A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow ( l b * i n ) for the spread of the compound. Use of cable lugs is n o t recommendd, busbars should be used and r e s t r a i n e d during tightening. Threads must be g (oz) lubricated with a compound
IRK.F200..
- 40 to 125 - 40 to 150 0.125
Units Conditions
°C
K/W
Per junction, DC operation
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