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Part: IRLML2502
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: 20V Single N-channel HexFET Power MOSFET in a Micro 3 Package
Company: International Rectifier Corp.
Datasheet: Download IRLML2502 datasheet File size : 175 kB
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Datasheet text preview:
PD - 93757C
IRLML2502
HEXFET® Power MOSFET
l l l l l l
Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
G1 3D S 2
VDSS = 20V RDS(on) = 0.045
Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
M i c r o 3
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
20 4.2 3.4 33 1.25 0.8 0.01 ± 12 -55 to + 150
Units
V A W W/°C V °C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Typ.
75
Max.
100
Units
°C/W
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1
04/30/03
IRLML2502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qg s Qg d td(on) tr td(off) tf Ciss C oss Crss
Min. 20 0.60 5.8
Typ. 0.01 0.035 0.050 8.0 1.8 1.7 7.5 10 54 26 740 90 66
Max. Units V V / ° C 0.045 0.080 1.2 V S 1.0 µA 25 -100 nA 100 12 2.7 nC 2.6 ns pF
Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 4.2A VGS = 2.5V, ID = 3.6A VDS = VGS, ID = 250µA VDS = 10V, ID = 4.0A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 70°C VGS = -12V VGS = 12V ID = 4.0A VDS = 10V VGS = 5.0V VDD = 10V ID = 1.0A RG = 6 RD = 10 VGS = 0V VDS = 15V = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
V SD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. T y p . M a x . U n i t s 16 8.6 1.3 A 33 1.2 24 13 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 1.3A, VGS = 0V TJ = 25°C, IF = 1.3A di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by Pulse width 300µs; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t 5sec.
2
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IRLML2502
100
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
100
I D , Drain-to-Source Current (A)
2.25V
10
I D , Drain-to-Source Current (A)
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
10
2.25V
1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 4.0A
I D , Drain-to-Source Current (A)
1.5
TJ = 25 ° C
1.0
TJ = 150 ° C
0.5
10 2.0
V DS = 15V 20µs PULSE WIDTH 2.4 2.8 3.2 3.6 4.0
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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