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Part: IRLML2502PBF
Category:
Description: 20V Single N-channel Lead Free HexFET Power MOSFET in a Micro3 Package
Company: International Rectifier Corp.
Datasheet: Download IRLML2502PBF datasheet File size : 175 kB
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Datasheet text preview:
PD - 94892
IRLML2502PbF
l l l l l l l
Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free
HEXFET® Power MOSFET
G1 3D S 2
VDSS = 20V RDS(on) = 0.045
Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
M i c r o 3TM
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
20 4.2 3.4 33 1.25 0.8 0.01 ± 12 -55 to + 150
Units
V A W W/°C V °C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Typ.
75
Max.
100
Units
°C/W
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1
12/16/03
IRLML2502PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qg s Qg d td(on) tr td(off) tf Ciss C oss Crss
Min. 20 0.60 5.8
Typ. 0.01 0.035 0.050 8.0 1.8 1.7 7.5 10 54 26 740 90 66
Max. Units V V / ° C 0.045 0.080 1.2 V S 1.0 µA 25 -100 nA 100 12 2.7 nC 2.6 ns pF
Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 4.2A VGS = 2.5V, ID = 3.6A VDS = VGS, ID = 250µA VDS = 10V, ID = 4.0A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 70°C VGS = -12V VGS = 12V ID = 4.0A VDS = 10V VGS = 5.0V VDD = 10V ID = 1.0A RG = 6 RD = 10 VGS = 0V VDS = 15V = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
V SD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. T y p . M a x . U n i t s 16 8.6 1.3 A 33 1.2 24 13 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 1.3A, VGS = 0V TJ = 25°C, IF = 1.3A di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by Pulse width 300µs; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t 5sec.
2
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IRLML2502PbF
100
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
100
I D , Drain-to-Source Current (A)
2.25V
10
I D , Drain-to-Source Current (A)
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP
10
2.25V
1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 4.0A
I D , Drain-to-Source Current (A)
1.5
TJ = 25 ° C
1.0
TJ = 150 ° C
0.5
10 2.0
V DS = 15V 20µs PULSE WIDTH 2.4 2.8 3.2 3.6 4.0
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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