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Part: IRLML2803TR
Category:
Discrete
Description: 30V Single N-channel HexFET Power MOSFET in a Micro 3 Package
Company: International Rectifier Corp.
Datasheet: Download IRLML2803TR datasheet File size : 175 kB
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Datasheet text preview:
PD - 91258D
HEXFET® Power MOSFET
l l l l l l l
IRLML2803
VDSS = 30V
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
D
G S
RDS(on) = 0.25
Description
Fifth Generation HEXFETs from International Rectifier u t i l i z e advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro3
Absolute Maximum Ratings
Parameter
I D @ TA = 25°C I D @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
1.2 0.93 7.3 540 4.3 ± 20 5.0 -55 to + 150
Units
A mW
mW/°C
V V/ns °C
Thermal Resistance
RJA Maximum Junction-to-Ambient
Parameter
Typ.
Max.
230
Units
°C/W
4/28/03
IRLML2803
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) g fs IDSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss
Min. 30 1.0 0.87
Typ. 0.029 3.3 0.48 1.1 3.9 4.0 9.0 1.7 85 34 15
Max. U n i t s V V/°C 0.25 0.40 V S 1.0 µA 25 -100 nA 100 5.0 0.72 nC 1.7 ns pF
Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 0.91A VGS = 4.5V, ID = 0.46A VDS = VGS, ID = 250µA VDS = 10V, ID = 0.46A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V ID = 0.91A VDS = 24V VGS = 10V, See Fig. 6 and 9 VDD = 15V ID = 0.91A RG = 6.2 RD = 16, See Fig. 10 VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 26 22 0.54 7.3 1.2 40 32 V ns nC A
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 0.91A, VGS = 0V TJ = 25°C, IF = 0.91A di/dt = 100A/µs
D
G S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300µs; duty cycle 2%. Surface mounted on FR-4 board, t 5sec.
ISD 0.91A, di/dt 120A/µs, VDD V(BR)DSS,
TJ 150°C
IRLML2803
10
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
10
I D , Drain-to-Source Current (A)
1
I D, Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
1
3.0V
3.0V 20µs PULSE WIDTH TJ = 25°C A
0.1 1 10
0.1
0.1 0.1 1
20µs PULSE WIDTH TJ = 150°C A
10
V DS , Drain-to-Source Voltage (V)
V DS Drain-to-Source Voltage (V) ,
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
I D , Drain-to-Source Current (A)
TJ = 25°C TJ = 150°C
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 0.91A
1.5
1
1.0
0.5
0.1 3.0
V DS = 10V 20µs PULSE WIDTH
3.5 4.0 4.5 5.0 5.5 6.0
6.5
A
0.0 -60 -40 -20 0 20 40 60 80
VGS = 10V
100 120 140 160
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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