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Part: IRLML5103PBF
Category:
Description: -30V Single P-channel Lead Free HexFET Power MOSFET in a Micro3 Package
Company: International Rectifier Corp.
Datasheet: Download IRLML5103PBF datasheet File size : 175 kB
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Datasheet text preview:
PD - 94894
IRLML5103PbF
l l l l l l l l
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free
D
VDSS = -30V
G S
RDS(on) = 0.60
Description
Fifth Generation HEXFETs from International Rectifier u t i l i z e advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro3
Absolute Maximum Ratings
Parameter
I D @ TA = 25°C I D @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
-0.76 -0.61 -4.8 540 4.3 ± 20 -5.0 -55 to + 150
Units
A mW
mW/°C
V V/ns °C
Thermal Resistance
RJA Maximum Junction-to-Ambient
Parameter
Typ.
Max.
230
Units
°C/W
8/10/04
IRLML5103PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) V GS(th) g fs IDSS I GSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss C rss
Min. -30 -1.0 0.44
Typ. -0.029 3.4 0.52 1.1 10 8.2 23 16 75 37 18
Max. U n i t s V V/°C 0.60 1.0 V S -1.0 µA -25 -100 nA 100 5.1 0.78 nC 1.7 ns pF
Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -0.60A VGS = -4.5V, I D = -0.30A VDS = VGS, I D = -250µA VDS = -10V, ID = -0.30A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V ID = -0.60A VDS = -24V VGS = -10V, See Fig. 6 and 9 VDD = -15V ID = -0.60A RG = 6.2 RD = 25, See Fig. 10 VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units -0.54 26 20 -4.8 -1.2 39 30 V ns nC A
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -0.60A, VGS = 0V TJ = 25°C, IF = -0.60A di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300µs; duty cycle 2%.
ISD -0.60A, di/dt 110A/µs, VDD V(BR)DSS, Surface mounted on FR-4 board, t 5sec.
TJ 150°C
IRLML5103PbF
10
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP
10
-I D , Drain-to-Source Current (A)
1
-I D , Drain-to-Source Current (A)
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP
1
-3.0V 20µs PULSE WIDTH TJ = 25°C A
0.1 1 10
-3.0V 20µs PULSE WIDTH TJ = 150°C A
0.1 1 10
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
TJ = 25°C TJ = 150°C
1
R DS(on) , Drain-to-Source On Resistance (Normali zed)
I D = -0.60A
-ID , Drain-to-Source Current (A)
1.5
1.0
0.5
0.1 3.0 4.0 5.0
VDS = -10V 20µs PULSE WIDTH
6.0 7.0 8.0
A
0.0 -60 -40 -20 0 20 40 60 80
VGS = -10V
100 120 140 160
A
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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