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Part: IRLML5203PBF
Category:
Description: -30V Single P-channel Lead Free HexFET Power MOSFET in a Micro3 Package
Company: International Rectifier Corp.
Datasheet: Download IRLML5203PBF datasheet File size : 175 kB
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Datasheet text preview:
PD - 94895
IRLML5203PbF
l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free
HEXFET® Power MOSFET VDSS
-30V
RDS(on) max (mW)
98@VGS = -10V 165@VGS = -4.5V
ID
-3.0A -2.6A
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
G1 3D S 2
Micro3TM
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -3.0 -2.4 -24 1.25 0.80 10 ± 20 -55 to + 150
Units
V A W mW/°C V °C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
100
Units
°C/W
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1
12/16/03
IRLML5203PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qg s Qg d td(on) tr td(off) tf Ciss Coss Crss
Min. -30 -1.0 3.1
Typ. 0.019 9.5 2.3 1.6 12 18 88 52 510 71 43
Max. Units V V / ° C 98 m 165 -2.5 V S -1.0 µA -5.0 -100 nA 100 14 3.5 nC 2.4 ns pF
Conditions VGS = 0V, ID = -250µA Reference to 25°C, I D = -1mA VGS = -10V, ID = -3.0A VGS = -4.5V, ID = -2.6A VDS = VGS, ID = -250µA VDS = -10V, ID = -3.0A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 70°C VGS = -20V VGS = 20V ID = -3.0A VDS = -24V VGS = -10V VDD = -15V ID = -1.0A R G = 6.0 VGS = -10V VGS = 0V VDS = -25V = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Qr r
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. T y p . M a x . U n i t s 17 12 -1.3 -24 -1.2 26 18 V ns nC A
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.3A, VGS = 0V TJ = 25°C, IF = -1.3A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t 5sec.
Pulse width 400µs; duty cycle 2%.
2
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IRLML5203PbF
100
VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
10
VGS - 15V - 10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP
1
-2.70V
0.1
1
-2.70V
20µs PULSE WIDTH TJ = 150 °C
1 10 100
0.01 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
0.1 0.1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 3.0A
-I D , Drain-to-Source Current (A)
1.5
10
TJ = 150 ° C
1
1.0
TJ = 25 ° C
V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0
0.5
0.1 2.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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