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Part: IRLML5203TR
Category:
Discrete
Description: -30V Single P-channel HexFET Power MOSFET in a Micro 3 Package
Company: International Rectifier Corp.
Datasheet: Download IRLML5203TR datasheet File size : 175 kB
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Datasheet text preview:
PD - 93967A
PROVISIONAL
IRLML5203
HEXFET® Power MOSFET RDS(on) max (mW)
98@VGS = -10V 165@VGS = -4.5V
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-30V
ID
-3.0A -2.6A
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
G1 3D S 2
Micro3TM
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -3.0 -2.4 -24 1.25 0.80 10 ± 20 -55 to + 150
Units
V A W mW/°C V °C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
100
Units
°C/W
www.irf.com
1
04/30/03
IRLML5203
V(BR)DSS
V(BR)DSS/TJ
PROVISIONAL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 -1.0 3.1 Typ. 0.019 9.5 2.3 1.6 12 18 88 52 510 71 43 Max. Units V V / ° C 98 m 165 -2.5 V S -1.0 µA -5.0 -100 nA 100 14 3.5 nC 2.4 ns pF Conditions VGS = 0V, ID = -250µA Reference to 25°C, I D = -1mA VGS = -10V, ID = -3.0A VGS = -4.5V, ID = -2.6A VDS = VGS, ID = -250µA VDS = -10V, ID = -3.0A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 70°C VGS = -20V VGS = 20V ID = -3.0A VDS = -24V VGS = -10V VDD = -15V ID = -1.0A R G = 6.0 VGS = -10V VGS = 0V VDS = -25V = 1.0MHz
RDS(on) VGS(th) gfs IDSS I GSS Qg Qg s Qg d td(on) tr td(off) tf Ciss Coss Crss
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Qr r
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. T y p . M a x . U n i t s 17 12 -1.3 -24 -1.2 26 18 V ns nC A
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.3A, VGS = 0V TJ = 25°C, IF = -1.3A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t 5sec.
Pulse width 400µs; duty cycle 2%.
2
www.irf.com
PROVISIONAL
IRLML5203
VGS - 15V - 10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP
100
10
1
-2.70V
0.1
1
-2.70V
20µs PULSE WIDTH TJ = 150 °C
1 10 100
0.01 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
0.1 0.1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 3.0A
-I D , Drain-to-Source Current (A)
1.5
10
TJ = 150 ° C
1
1.0
TJ = 25 ° C
V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0
0.5
0.1 2.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
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