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Part: IRLML6401PBF
Category:
Description: -12V Single P-channel Lead Free HexFET Power MOSFET in a Micro3 Package
Company: International Rectifier Corp.
Datasheet: Download IRLML6401PBF datasheet File size : 175 kB
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Datasheet text preview:
PD - 94891
IRLML6401PbF
l l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching 1.8V Gate Rated Lead-Free
HEXFET® Power MOSFET
G1 3D S 2
VDSS = -12V RDS(on) = 0.05
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Micro3 TM
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C I DM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-12 -4.3 -3.4 -34 1.3 0.8 0.01 33 ± 8.0 -55 to + 150
Units
V A W W/°C mJ V °C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Typ.
75
Max.
100
Units
°C/W
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1
12/15/03
IRLML6401PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qg s Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance M i n . T y p . Max. U n i t s - 1 2 V -0.007 V/°C 0.050 0.085 0.125 -0.40 -0.55 -0.95 V 8 . 6 S - 1 . 0 µA - 2 5 - 1 0 0 nA 100 10 15 1.4 2.1 nC 2 . 6 3 . 9 11 ns 32 250 210 830 180 pF 125 Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -4.3A VGS = -2.5V, ID = -2.5A VGS = -1.8V, ID = -2.0A VDS = VGS, ID = -250µA VDS = -10V, ID = -4.3A VDS = -12V, VGS = 0V VDS = -9.6V, VGS = 0V, TJ = 55°C VGS = -8.0V VGS = 8.0V ID = -4.3A VDS = -10V VGS = -5.0V VDD = -6.0V ID = -1.0A RD = 6.0 RG = 89 VGS = 0V VDS = -10V = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
V SD trr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. T y p . M a x . U n i t s 22 8.0 -1.3 A -34 -1.2 33 12 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.3A, VGS = 0V TJ = 25°C, IF = -1.3A di/dt = -100A/µs
D
S
Notes: max. junction temperature. Pulse width 300µs; duty cycle 2%.
Repetitive rating; pulse width limited by
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting TJ = 25°C, L = 3.5mH
RG = 25, IAS = -4.3A.
2
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IRLML6401PbF
100
VGS -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V -1.5V BOTTOM -1.0V TOP
100
VGS -7.0V -5.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.0V TOP
-I D, Drain-to-Source Current (A)
10
-I D, Drain-to-Source Current (A)
10
1
1
-1.0V
-1.0V
0.1
0.1
20µs PULSE WIDTH Tj = 25°C
0.01 0.1 1 10 100
20µs PULSE WIDTH Tj = 150°C
0.01 0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
2.0
-I D , Drain-to-Source Current ( )
T J = 25°C
10.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -4.3A
T J = 150°C
1.5
1.0
1.0
0.5
VDS = -12V
0.1 1.0 1.5 2.0
20µs PULSE WIDTH
2.5 3.0 3.5 4.0
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-V GS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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