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Part: IRLML6402TR
Category:
Discrete
Description: -20V Single P-channel HexFET Power MOSFET in a Micro 3 Package
Company: International Rectifier Corp.
Datasheet: Download IRLML6402TR datasheet File size : 175 kB
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Datasheet text preview:
PD - 93755B
IRLML6402
HEXFET® Power MOSFET
l l l l l l
Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
D
VDSS = -20V
G S
RDS(on) = 0.065
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Micro3
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C I DM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 -3.7 -2.2 -22 1.3 0.8 0.01 11 ± 12 -55 to + 150
Units
V A W W/°C mJ V °C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Typ.
75
Max.
100
Units
°C/W
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1
04/29/03
IRLML6402
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qg s Qg d td(on) tr td(off) tf Ciss Coss Crss
Min. -20 -0.40 6.0
Typ. Max. Units V -0.009 V/°C 0.050 0.065 0.080 0.135 -0.55 -0.95 V S -1.0 µA -25 -100 nA 100 8.0 12 1.2 1.8 nC 2.8 4.2 350 48 ns 588 381 633 145 pF 110
Conditions VGS = 0V, ID = -250µA Reference to 25°C, I D = -1mA VGS = -4.5V, ID = -3.7A VGS = -2.5V, ID = -3.1A VDS = VGS, ID = -250µA VDS = -10V, ID = -3.7A VDS = -20V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 70°C VGS = -12V VGS = 12V ID = -3.7A VDS = -10V VGS = -5.0V VDD = -10V ID = -3.7A RG = 89 RD = 2.7 VGS = 0V VDS = -10V = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
V SD t rr Qr r
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. T y p . M a x . U n i t s 29 11 -1.3 A -22 -1.2 43 17 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.0A, VGS = 0V TJ = 25°C, IF = -1.0A di/dt = -100A/µs
D
S
Notes: max. junction temperature. Pulse width 400µs; duty cycle 2%.
Repetitive rating; pulse width limited by
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting TJ = 25°C, L = 1.65mH
RG = 25, IAS = -3.7A.
** For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRLML6402
100
VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP
10
10
-2.25V
-2.25V
1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 25 ° C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -3.7A
-I D , Drain-to-Source Current (A)
1.5
TJ = 150 ° C
1.0
0.5
10 2.0
V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0
-VGS , Gate-to-Source Voltage (V)
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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