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Part: IRLMS1503TR
Category:
Discrete
Description: 30V Single N-channel HexFET Power MOSFET in a TSOP-6 (Micro 6) Package
Company: International Rectifier Corp.
Datasheet: Download IRLMS1503TR datasheet File size : 175 kB
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Datasheet text preview:
PD - 9.1508C
IRLMS1503
HEXFET® Power MOSFET
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Generation V Technology Micro6 Package Style Ultra Low Rds(on) N-Channel MOSFET
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$
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VDSS = 30V
#
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and r u g g e d i z e d device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
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!
"
RDS(on) = 0.10
Top View
M ic r o 6
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
3.2 2.6 18 1.7 13 ± 20 5.0 -55 to + 150
Units
A W
mW/°C
V V/ns °C
Thermal Resistance Ratings
Parameter
RJA Maximum Junction-to-Ambient
Min.
Typ.
Max
75
Units
°C/W
1/12/98
IRLMS1503
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qg s Qg d td(on) tr td(off) tf Ciss Coss Crss
Min. 30 1.0 1.1
Typ. 0.037 6.4 1.1 1.9 4.6 4.4 10 2.0 210 90 32
Max. Units V V / ° C 0.10 0.20 V S 1.0 µA 25 -100 nA 100 9.6 1.7 nC 2.8 ns pF
Conditions V GS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 2.2A VGS = 4.5V, ID = 1.1A VDS = V GS, ID = 250µA V DS = 10V, ID = 1.1A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V ID = 2.2A VDS = 24V VGS = 10V, See Fig. 6 and 9 VDD = 15V ID = 2.2A RG = 6.0 RD = 6.7, See Fig. 10 VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VS D t rr Qr r
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 36 39 1.7 A 18 1.2 54 58 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 2.2A, VGS = 0V TJ = 25°C, I F = 2.2A di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300µs; duty cycle 2%. Surface mounted on FR-4 board, t 5sec.
ISD 2.2A, di/dt 150A/µs, VDD V(BR)DSS,
TJ 150°C
IRLMS1503
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V B O T T O M 3.0V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V B O T T O M 3.0V TOP
10
10
1
1
3.0V
3.0V
20µs PULSE WIDTH TJ = 25 °C
1 10
0.1 0.1
0.1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 25 ° C
10
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 2.2A
I D , Drain-to-Source Current (A)
1.5
TJ = 150 ° C
1.0
1
0.5
0.1 3.0
V DS = 10V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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