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Part: IRLMS1902
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: 20V Single N-channel HexFET Power MOSFET in a TSOP-6 (Micro 6) Package
Company: International Rectifier Corp.
Datasheet: Download IRLMS1902 datasheet File size : 175 kB
Request For quote: Find where to buy IRLMS1902
Datasheet text preview:
PD - 9.1540B
IRLMS1902
HEXFET® Power MOSFET
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Generation V Technology Micro6 Package Style Ultra Low Rds(on) N-Channel MOSFET
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$
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VDSS = 20V
#
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and r u g g e d i z e d device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
/
!
"
RDS(on) = 0.10
Top View
M ic r o 6
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
3.2 2.6 18 1.7 13 ± 12 5.0 -55 to + 150
Units
A W
mW/°C
V V/ns °C
Thermal Resistance Ratings
Parameter
RJA Maximum Junction-to-Ambient
Min.
Typ.
Max
75
Units
°C/W
1/12/98
IRLMS1902
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qg s Qg d td(on) tr td(off) tf Ciss Coss Crss
Min. 20 0.70 3.2
Typ. 0.032 4.7 0.97 1.8 7.0 11 12 4.0 300 120 50
Max. Units V V / ° C 0.10 0.17 V S 1.0 µA 25 100 nA -100 7.0 1.5 nC 2.6 ns pF
Conditions V GS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 2.2A VGS = 2.7V, ID = 1.1A V DS = V GS, ID = 250µA V DS = 10V, ID = 1.1A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C V GS = 12V VGS = -12V ID = 2.2A VDS = 16V VGS = 4.5V, See Fig. 6 and 9 VDD = 10V ID = 2.2A RG = 6.0 RD = 4.4, See Fig. 10 VGS = 0V VDS = 15V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VS D t rr Qr r
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 40 37 1.7 A 18 1.2 60 55 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 2.2A, VGS = 0V TJ = 25°C, I F = 2.2A di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300µs; duty cycle 2%. Surface mounted on FR-4 board, t 5sec.
ISD 2.2A, di/dt 110A/µs, VDD V(BR)DSS,
TJ 150°C
IRLMS1902
100
VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V B O T T O M 1.75V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V B O T T O M 1.75V TOP
10
10
1
1
1.75V
1.75V
0.1 0.1 1
20µs PULSE WIDTH TJ = 25 °C
10
0.1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 25 ° C
10
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 2.2A
I D , Drain-to-Source Current (A)
1.5
TJ = 150 ° C
1.0
1
0.5
0.1 1.5
V DS = 10V 20µs PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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