|
|
Part: IRLMS2002TR
Category:
Discrete
Description: 20V Single N-channel HexFET Power MOSFET in a TSOP-6 (Micro 6) Package
Company: International Rectifier Corp.
Datasheet: Download IRLMS2002TR datasheet File size : 175 kB
Request For quote: Find where to buy IRLMS2002TR
Datasheet text preview:
PD- 93758D
IRLMS2002
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated
D D G
1
6
A D
VDSS = 20V
2 5
D S
3
4
RDS(on) = 0.030
Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Top View
Micro6
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
20 6.5 5.2 20 2.0 1.3 0.016 ± 12 -55 to + 150
Units
V A W W/°C V °C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
www.irf.com
1
01/13/03
IRLMS2002
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qg s Qg d td(on) tr td(off) tf Ciss Coss Crss
Min. 20 0.60 13
Typ. 0.016 15 2.2 3.5 8.5 11 36 16 1310 150 36
Max. Units V V / ° C 0.030 0.045 1.2 V S 1.0 µA 25 -100 nA 100 22 3.3 nC 5.3 ns pF
Conditions VGS = 0V, ID = 250µA Reference to 25°C, I D = 1mA VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.2A VDS = V GS, ID = 250µA VDS = 10V, ID = 6.5A VDS = 16V, VGS = 0V VDS = 16V, V GS = 0V, TJ = 70°C VGS = -12V VGS = 12V ID = 6.5A VDS = 10V VGS = 5.0V VDD = 10V ID = 1.0A RG = 6.0 RD = 10 VGS = 0V VDS = 15V = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Qr r
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. M a x . U n i t s 19 13 2.0 A 20 1.2 29 20 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 1.7A, VGS = 0V TJ = 25°C, I F = 1.7A di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t 5sec.
Pulse width 400µs; duty cycle 2%.
2
www.irf.com
IRLMS2002
100
VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP
10
10
1.50V
1.50V
1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 25 ° C TJ = 150 ° C
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 5.3A
I D , Drain-to-Source Current (A)
1.5
1.0
0.5
1 1.5
V DS = 15V 20µs PULSE WIDTH 2.0 2.5 3.0 3.5
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
Others parts begin by ir
IR-1 IR-2 IR-3 IR-4 IR-5 IR-6 IR-7 IR-8 IR-9 IR-10 IR-11 IR-12 IR-13 IR-14 IR-15 IR-16 IR-17 IR-18 IR-19 IR-20 IR-21 IR-22 IR-23 IR-24 IR-25 IR-26 IR-27 IR-28 IR-29 IR-30 IR-31
|
|
|
