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Part: IRLMS4502
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> P-Channel
Description: -12V Single P-channel HexFET Power MOSFET in a TSOP-6 (Micro 6) Package
Company: International Rectifier Corp.
Datasheet: Download IRLMS4502 datasheet File size : 175 kB
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Datasheet text preview:
PD- 93759B
IRLMS4502
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel
D
1
6
A D
VDSS = -12V
D
2 5
D
G
3
4
S
RDS(on) = 0.042
Top View
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Micro6ä
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-12 -5.5 -4.4 -44 1.7 1.1 0.013 28 ± 12 -55 to + 150
Units
V A W W/°C mJ V °C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
75
Units
°C/W
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1
01/13/03
IRLMS4502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qg s Qg d td(on) tr td(off) tf Ciss Coss Crss
Min. -12 -0.60 8.8
Typ. M a x . U n i t s V -0.003 V/°C 0.042 0.075 V S -1.0 µA -25 -100 nA 100 22 33 3.9 5.8 nC 11 16 18 460 ns 130 250 1820 1110 pF 1070
Conditions VGS = 0V, ID = -250µA Reference to 25°C, I D = -1mA VGS = -4.5V, ID = -5.5A VGS = -2.5V, ID = -4.7A VDS = V GS, ID = -250µA VDS = -10V, ID = -5.5A VDS = -12V, VGS = 0V VDS = -9.6V, VGS = 0V, T J = 125°C VGS = -12V VGS = 12V ID = -5.5A VDS = -10V VGS = -5.0V VDD = -6.0V ID = -1.0A RG = 4.5 RD = 6.0 VGS = 0V VDS = -10V = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Qr r
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. M a x . U n i t s 31 21 -1.7 -44 -1.2 46 32 V ns nC A
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.7A, VGS = 0V TJ = 25°C, I F = -5.5A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t 5sec. Starting TJ = 25°C, L = 1.8mH
RG = 25, IAS = -5.5A. (See Figure 12)
Pulse width 400µs; duty cycle 2%.
2
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IRLMS4502
1000
VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP
100
-I D , Drain-to-Source Current (A)
100
-I D , Drain-to-Source Current (A)
VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP
10
-2.25V
10
-2.25V
1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -5.5A
-I D , Drain-to-Source Current (A)
1.5
100
1.0
TJ = 25 ° C TJ = 150 ° C
0.5
10 2.0
V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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