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Part: IRLMS5703TR
Category:
Discrete
Description: -30V Single P-channel HexFET Power MOSFET in a TSOP-6 (Micro 6) Package
Company: International Rectifier Corp.
Datasheet: Download IRLMS5703TR datasheet File size : 175 kB
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Datasheet text preview:
PD - 9.1413D
IRLMS5703
HEXFET® Power MOSFET
l l l l
Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET
D
1
6
A D
VDSS = -30V
D
2
5
D
G
3
4
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and r u g g e d i z e d device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
RDS(on) = 0.20
T o p V ie w
M icro 6
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VG S dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @- 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
-2.3 -1.9 -13 1.7 13 ± 20 5.0 -55 to + 150
Units
A W
mW/°C
V V/ns °C
Thermal Resistance Ratings
Parameter
R JA Maximum Junction-to-Ambient
Min.
Typ.
Max
75
Units
°C/W
8/25/97
IRLMS5703
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qg d td(on) tr td(off) tf Ciss Coss Crss
Min. -30 -1.0 1.1
Typ. 0.01 7.2 1.4 2.3 10 12 20 8.4 170 89 44
Max. Units V V/°C 0.20 0.40 V S -1.0 µA -25 100 nA -100 11 2.1 nC 3.4 ns pF
Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -1.6A VGS = -4.5V, ID = -0.80A VDS = VGS , ID = -250µA VDS = -10V, ID = -0.80A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V ID = -1.6A VDS = -24V VGS = -10V, See Fig. 6 and 9 VDD = -15V ID = -1.6A RG = 6.2 RD = 9.2, See Fig. 10 VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 29 27 -1.7 A -13 -1.2 44 41 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.6A, VGS = 0V TJ = 25°C, I F = -1.6A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300µs; duty cycle 2%. Surface mounted on FR-4 board, t 5sec.
ISD -1.6A, di/dt -140A/µs, VDD V(BR)DSS ,
TJ 150°C
IRLMS5703
100
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V TOP
100
- I D , D r a in - to - S o u r c e C u r r e n t (A )
10
- I D , D r a i n - t o - S o u r c e C u r r e n t (A )
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V TOP
10
1
1
-3 .0 V
-3.0 V
0.1 0.1 1
20 µ s P U L S E W I D T H TJ = 25 ° C A
10
0.1 0.1 1
20 µ s P U L S E W I D T H TJ = 15 0 ° C A
10
- VD S , D ra i n - t o - S o u rc e V o lt a g e (V )
- VD S , D ra i n - t o - S o u rc e V o lt a g e (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R D S (o n ) , D r a i n - t o - S o u r c e O n R e s i s t a n c e ( N o r m a li z e d )
I D = -1.6A
- I D , D r a in - to - S o u r c e C u r r e n t ( A )
1.5
10
TJ = 2 5 ° C TJ = 1 5 0 ° C
1.0
1
0.5
0.1 3.0 4.0 5.0
V DS = -1 0 V 20µs P ULS E W IDT H
6.0 7.0 8.0
A
0.0 -60 -40 -20 0 20 40 60 80
VG S = -10 V
100 120 140 160
A
- VG S , Ga t e - t o - S o u r c e V o l t a g e (V )
T J , Junction T e m p e r a t u r e (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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