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Part: IRLMS6702
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> P-Channel
Description: -20V Single P-channel HexFET Power MOSFET in a TSOP-6 (Micro 6) Package
Company: International Rectifier Corp.
Datasheet: Download IRLMS6702 datasheet File size : 175 kB
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Datasheet text preview:
PD - 9.1414B
IRLMS6702
HEXFET® Power MOSFET
l l l l
Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET
D
1
6
A D
VDSS = -20V
D
2
5
D
G
3
4
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and r u g g e d i z e d device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
RDS(on) = 0.20
T o p V ie w
M icro 6
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VG S dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
-2.3 -1.9 -13 1.7 13 ± 12 5.0 -55 to + 150
Units
A W
mW/°C
V V/ns °C
Thermal Resistance Ratings
Parameter
R JA Maximum Junction-to-Ambient
Min.
Typ.
Max
75
Units
°C/W
8/25/97
IRLMS6702
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance M i n . T y p . M a x . Units - 2 0 V -0.005 V/°C 0.200 0.375 - 0 . 7 0 V 1 . 5 S - 1 . 0 µA - 2 5 - 1 0 0 nA 100 5 . 8 8 . 8 1 . 8 2 . 6 nC 2 . 1 3 . 1 1 3 2 0 ns 2 1 1 8 210 130 pF 7 3 Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -1.6A VGS = -2.7V, ID = -0.80A VDS = VGS, ID = -250µA VDS = -10V, ID = -0.80A VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125°C VGS = -12V VGS = 12V ID = -1.6A VDS = -16V VGS = -4.5V, See Fig. 6 and 9 VDD = -10V ID = -1.6A RG = 6.0 RD = 6.1, See Fig. 10 VGS = 0V VDS = -15V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 25 15 -1.7 A -13 -1.2 37 22 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.6A, VGS = 0V TJ = 25°C, I F = -1.6A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300µs; duty cycle 2%. Surface mounted on FR-4 board, t 5sec.
ISD -1.6A, di/dt -100A/µs, VDD V(BR)DSS,
TJ 150°C
IRLMS6702
100
VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTT OM -1. 75V TOP
100
- I D , D r a in - to - S o u r c e C u r r e n t (A )
10
- ID , D r a i n - t o - S o u r c e C u r r e n t (A )
VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTT OM -1. 75V TOP
10
1
1
- 1 .7 5 V
- 1 .7 5 V
0.1 0.1 1
20 µ s P U L S E W I D T H TJ = 25 ° C A
10
0.1 0.1 1
20 µ s P U L S E W I D T H TJ = 150 ° C
10
A
- VD S , D ra i n - t o - S o u rc e V o lt a g e (V )
- VD S , Drain-to-Source V o l t a g e (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R D S (o n ) , D r a i n - t o - S o u r c e O n R e s i s t a n c e ( N o r m a li z e d )
I D = -1.6A
- I D , D r a in - to - S o u r c e C u r r e n t ( A )
1.5
10
T J = 2 5 °C TJ = 1 5 0 ° C
1
1.0
0.5
0.1 1.5 2.0 2.5 3.0
V DS = -1 0 V 20µs P ULS E W IDT H
3.5 4.0 4.5 5.0
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = -4 .5 V
100 120 140 160
A
- VG S , Ga t e - t o - S o u r c e V o l t a g e (V )
T J , Junction T e m p e r a t u r e (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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