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Part: IRLMS6802TR
Category:
Discrete
Description: -20V Single P-channel HexFET Power MOSFET in a TSOP-6 (Micro 6) Package
Company: International Rectifier Corp.
Datasheet: Download IRLMS6802TR datasheet File size : 175 kB
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Datasheet text preview:
PD- 91848E
IRLMS6802
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel
D
1
6
A D
VDSS = -20V
D
2 5
D
G
3
4
S
RDS(on) = 0.050
Top View
Description
These P-Channel MOSFETs from International Rectifier u t i l i z e advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
M i c r o 6ä
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 -5.6 -4.5 -45 2.0 1.3 0.016 31 ± 12 -55 to + 150
Units
V A W W/°C mJ V °C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
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01/13/03
IRLMS6802
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qg s Qg d td(on) tr td(off) tf Ciss Coss Crss
Min. -20 -0.60 1.5
Typ. M a x . U n i t s V -0.005 V/°C 0.050 0.100 - 1 . 2 V S -1.0 µA -25 -100 nA 100 11 16 2.2 3.3 nC 2.9 4.3 12 33 ns 70 72 1079 220 pF 152
Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -5.1A VGS = -2.5V, ID = -3.4A VDS = VGS, I D = -250µA VDS = -10V, I D = -0.80A VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125°C VGS = -12V VGS = 12V ID = -4.5A VDS = -10V VGS = -5.0V VDD = -10V ID = -1.0A RG = 6.0 RD = 10 VGS = 0V VDS = -10V = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Qr r
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. M a x . U n i t s 74 45 -2.0 -45 -1.2 110 67 V ns nC A
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.6A, VGS = 0V TJ = 25°C, IF = -3.0A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t 5sec. Starting TJ = 25°C, L = 6.8mH
RG = 25, IAS = -3.0A. (See Figure 12)
Pulse width 400µs; duty cycle 2%.
2
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IRLMS6802
100
VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP
10
10
1
1
-1.50V
-1.50V
0.1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
0.1 0.1
20µs PULSE WIDTH TJ = 150 ° C
1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 25 ° C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -5.6A
-I D , Drain-to-Source Current (A)
1.5
TJ = 150 ° C
10
1.0
0.5
1 1.0
V DS = -15V 20µs PULSE WIDTH 2.0 3.0 4.0 5.0
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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