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Part: IRLP2505
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: HexFET (r) Power MOSFET: 55v, 90a
Company: International Rectifier Corp.
Datasheet: Download IRLP2505 datasheet File size : 175 kB
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Datasheet text preview:
PD - _____
PRELIMINARY
IRLP2505
VDSS = 55V RDS(on) = 0.008 ID = 90A
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
90 64 360 150 1.0 ±20 500 54 15 2.9 -55 to + 175 300 (1.6mm from case) 10 lbf·in (1.1N·m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
Typ.
0.24
Max.
1.0 40
Units
°C/W
8/4/95
IRLP2505
Electrical Characteristics @ T = 25°C (unless otherwise specified) J
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 55 1.0 59
Typ. 0.035 12 160 43 84 5.0 13
Max. Units V V/°C 0.008 0.010 0.013 2.0 V S 25 µA 250 100 nA -100 130 25 nC 67 ns nH pF
5000 1100 390
Conditions VGS = 0V, ID = 250µA Reference to 25°C, I D = 1mA VGS = 10V, ID = 54A VGS = 5.0V, ID = 54A VGS = 4.0V, ID = 45A VDS = VGS, ID = 250µA VDS = 25V, ID = 54A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = 54A VDS = 44V VGS = 5.0V, See Fig. 6 and 13 VDD = 28V ID = 54A RG = 1.3, VGS = 5.0V RD = 0.50, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Qrr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 140 650 90 A 360 1.3 210 970 V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 54A, VGS = 0V TJ = 25°C, IF = 54A di/dt = 100A/µs
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting T J = 25°C, L = 240µH RG = 25, IAS = 54A. (See Figure 12) ISD 54A, di/dt 130A/µs, V DD V(BR)DSS, TJ 175°C
Pulse width 300µs; duty cycle 2%. Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4
IRLP2505
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
1000
ID , Drain-to-Source Current (A)
100
ID , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
100
2.5V
10
10
2.5V 20µs PULSE WIDTH T J = 25°C
1 10
1 0.1
100
A
1 0.1
20µs PULSE WIDTH T J = 175°C
1 10
100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics, TJ = 25oC
Fig 2. Typical Output Characteristics, TJ = 175oC
1000
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 90A
I D , Drain-to-Source Current (A)
TJ = 25°C
100
2.5
TJ = 175°C
2.0
1.5
10
1.0
0.5
1 2.5 3.5 4.5
V DS = 25V 20µs PULSE WIDTH
5.5 6.5
7.5
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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