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Part: IRLP3803
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: HexFET (r) Power MOSFET: 30v, 120a
Company: International Rectifier Corp.
Datasheet: Download IRLP3803 datasheet File size : 175 kB
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Datasheet text preview:
PD - _____
PRELIMINARY
IRLP3803
VDSS = 30V RDS(on) = 0.006 ID = 120A
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
120 83 470 150 1.0 ±20 610 71 15 1.8 -55 to + 175 300 (1.6mm from case) 10 lbf·in (1.1N·m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
Typ.
0.24
Max.
1.0 40
Units
°C/W
8/4/95
IRLP3803
Electrical Characteristics @ T = 25°C (unless otherwise specified) J
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 30 1.0 55
Typ. 0.052 14 230 29 35 5.0 13
Max. Units V V/°C 0.006 0.011 2.0 V S 25 µA 250 100 nA -100 140 41 nC 78 ns nH pF
5000 1800 880
Conditions VGS = 0V, ID = 250µA Reference to 25°C, I D = 1mA VGS = 10V, ID = 71A VGS = 4.5V, ID = 59A VDS = VGS, ID = 250µA VDS = 25V, ID = 71A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = 71A VDS = 24V VGS = 4.5V, See Fig. 6 and 13 VDD = 15V ID = 71A RG = 1.3, VGS = 4.5V RD = 0.20, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Qrr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 120 A 120 450 470 1.3 180 680 V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 71A, VGS = 0V TJ = 25°C, IF = 71A di/dt = 100A/µs
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 15V, starting T J = 25°C, L = 180µH RG = 25, IAS = 71A. (See Figure 12) ISD 71A, di/dt 130A/µs, V DD V(BR)DSS, TJ 175°C
Pulse width 300µs; duty cycle 2%. Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4
IRLP3803
10000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP
10000
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
1000
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP
100
100
10
10
1
1
2.0V
0.1
0.1
2.0V
0.01 0.1 1
20µs PULSE WIDTH T J = 25°C
10
100
A
0.01 0.1
20µs PULSE WIDTH T J = 175°C
1 10
100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics, TJ = 25oC
Fig 2. Typical Output Characteristics, TJ = 175oC
1000
2.0
I D , Drain-to-Source Current (A)
TJ = 25°C
100
TJ = 175°C
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 120A
1.5
10
1.0
1
0.5
0.1
0.01 2.0 3.0 4.0 5.0
V DS = 25V 20µs PULSE WIDTH
6.0 7.0 8.0
9.0
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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