|
Details, datasheet, quote on part number:IRLZ24NSTRR
| |
Datasheet text preview:
PD - 91358E
IRLZ24NS/L
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.06
G
ID = 18A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ24NL) is available for lowprofile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
18 13 72 3.8 45 0.30 ±16 68 11 4.5 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
3.3 40
Units
°C/W 5/12/98
IRLZ24NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V (BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 1.0 8.3 Typ. 0.061 7.1 74 20 29 7.5 480 130 61 M a x . Units V V/°C 0.060 0.075 0.105 2.0 V S 25 µA 250 100 nA -100 15 3.7 nC 8.5 ns nH pF Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 11A VGS = 5.0V, ID = 11A VGS = 4.0V, ID = 9.0A V DS = V GS, ID = 250µA VDS = 25V, ID = 11A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C VGS = 16V VGS = -16V ID = 11A VDS = 44V VGS = 5.0V, See Fig. 6 and 13 VDD = 28V ID = 11A R G = 12, VGS = 5.0V RD = 2.4, See Fig. 10 Between lead, and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD tr r Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
M i n . T y p . M a x . Units
Conditions D MOSFET symbol 18 showing the A G integral reverse 72 S p-n junction diode. 1 . 3 V TJ = 25°C, IS = 11A, VGS = 0V 60 90 ns TJ = 25°C, IF = 11A 130 200 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 11A, di/dt 290A/µs, VDD V(BR)DSS,
TJ 175°C
VDD = 25V, starting TJ = 25°C, L = 790µH
RG = 25, IAS = 11A. (See Figure 12)
Pulse width 300µs; duty cycle 2%. Uses IRLZ24N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
IRLZ24NS/L
100
TOP VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
100
ID , D r a i n - t o - S o u r c e C u r r e n t (A )
10
ID , D r a i n - t o - S o u r c e C u r r e n t (A )
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
10
2 .5 V
1
1
2 .5 V 2 0 µ s P U L S E W ID T H T J = 2 5°C
0.1 1 10
0.1
A
0.1 0.1 1
2 0 µ s P U L S E W ID T H T J = 1 7 5 °C
10
100
A
100
V D S , D r a i n - t o - S o u r c e V o l t a g e (V )
V D S , D r a i n - t o - S o u r c e V o l t a g e (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
TJ = 2 5 ° C
R D S ( o n ) , D r a in - to - S o u r c e O n R e s i s ta n c e ( N o r m a liz e d )
I D = 1 8A
I D , D r a in - t o - S o u r c e C u r r e n t (A)
2.5
TJ = 1 7 5 ° C
10
2.0
1.5
1
1.0
0.5
0.1 2 3 4 5 6
V DS = 1 5 V 2 0 µ s P U L S E W ID T H
7 8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
V G S , G a t e - to - S o u r c e Voltag e (V)
T J , Junction T e m p e r a t u r e (°C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
|
|
