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Details, datasheet, quote on part number:JANS2N6849
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Datasheet text preview:
PD - 90550D
IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET TRANSISTORS JANS2N6849 T H R U - H O L E (TO-205AF) REF:MIL-PRF-19500/564 1 0 0 V , P-CHANNEL
Product Summary
Part Number BVDSS RDS(on) IRFF9130 -100V 0.30 ID -6.5A
The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n n n n n
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -6.5 -4.1 -25 25 0.20 ±20 92 -- -- -5.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical)
Units A
W
W/°C
V mJ A mJ V/ns
o
C
g
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IRFF9130
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS BVDSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Min
-100 -- -- -- -2.0 2.5 -- -- -- -- 14.7 1.0 2.0 -- -- -- -- --
Typ Max Units
-- -0.10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.30 0.345 -4.0 -- -25 -250 -100 100 34.8 7.1 21 60 140 140 140 -- V V/°C V S( ) µA
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -4.1A VGS =-10V, ID =-6.5A VDS = VGS, ID = -250µA VDS > -15V, IDS = -4.1A VDS= -80V, VGS=0V VDS = -80V VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-10V, ID = -6.5A VDS= -50V VDD = -50V, ID = -6.5A, VGS =-10V,RG =7.5
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
800 350 125
-- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -6.5 -25 -4.7 250 3.0
Test Conditions
A
V nS µC Tj = 25°C, IS =-6.5A, VGS = 0V Tj = 25°C, IF = -6.5A, di/dt -100A/µs VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 5.0 175
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRFF9130
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs.Temperature
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IRFF9130
113 a& b 3 a& b
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFF9130
VDS V GS RG
RD
D.U.T.
+
VGS
Pulse Width 1 µs Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
VGS 10%
90%
Fig 9. Maximum Drain Current Vs. CaseTemperature
VDS
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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VDD
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