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Details, datasheet, quote on part number:JANS2N6849U
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Datasheet text preview:
PD - 91716B
IRFE9130 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6849U ® HEXFET TRANSISTOR JANTXV2N6849U [REF:MIL-PRF-19500/564] 100V, P-CHANNEL
P r o d u c t Summary
Part Number IRFE9130 BVDSS -100V RDS(on) 0.30 ID -6.5A
T h e leadless chip carrier (LCC) package represents the l o g i c a l next step in the continual evolution of surface m o u n t technology. Desinged to be a close replacement f o r the TO-39 package, the LCC will give designers the e x t r a flexibility they need to increase circuit board density. International Rectifier has engineered the LCC packa g e to meet the specific needs of the power market by i n c r e a s i n g the size of the bottom source pad, thereby e n h a n c i n g the thermal and electrical performance. The l i d of the package is grounded to the source to reduce R F interference.
LCC-18
Features:
! ! ! ! ! ! ! !
S u r f a c e Mount S m a l l Footprint A l t e r n a t i v e to TO-39 Package H e r m e t i c a l l y Sealed D y n a m i c dv/dt Rating A v a l a n c h e Energy Rating S i m p l e Drive Requirements Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C ID M PD @ TC = 25°C VGS EAS IA R EA R dv/dt TJ TS T G Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt O p e r a t i n g Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight F o r footnotes refer to the last page -6.5 -4.1 25 25 0.20 ±20 165 -30 - 5 5 to 150 300 (for 5 S) 0.42(typical)
Units A
W
W/°C
V mJ A mJ V/ns
o
C
g
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01/17/01
IRFE9130
Electrical Characteristics
Parameter
BVDSS B V D S S/ TJ RDS(on) V GS(th) gfs IDSS
@ Tj = 25°C (Unless Otherwise Specified) Min
-100 -- -- -- -2.0 1.9 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max U n i t s
-- -0.10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.30 0.345 -4.0 -- -25 -250 -100 100 35 6.8 23 60 140 140 140 -- V V/°C V S( ) µA nA nC
Te s t Conditions
VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -4.1A VGS = -10V, ID = -6.5A VDS = VGS, ID = -250µA VDS > -15V, IDS = -4.1A VDS= -80V, VGS= 0V VDS = -80V VGS = 0V, TJ = 125°C VGS =-20V VGS =20V VGS =-10V, ID= -6.5A VDS =-50V VDD =-50V, ID = -6.5A, RG =7.5
Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
G a t e - t o - S o u r c e Leakage Forward G a t e - t o - S o u r c e Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge T u r n - O n Delay Time Rise Time T u r n - O f f Delay Time Fall Time To t a l Inductance
ns nH
M e a s u r e d from the center of d r a i n pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz
Ciss C oss Crss
I n p u t Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
790 340 71
-- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge F o r w a r d Turn-On Time
Min Typ Max U n i t s
-- -- -- -- -- -- -- -- -- -- -6.5 -25 -4.3 250 3.0
Te s t Conditions
A
V nS µc Tj = 25°C, IS = -6.5A, VGS = 0V Tj = 25°C, IF = -6.5A, di/dt -100A/µs VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
T h e r m a l Resistance
Parameter
RthJC Rt h J - P C B Junction to Case Junction to PC Board
Min Typ Max U n i t s
-- -- -- -- 5.0 °C/W 19" " "
Te s t Conditions
Soldered to a copper clad PC board
F o r footnotes refer to the last page
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IRFE9130
100
10
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
100
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
10
-4.5V
20µs PULSE WIDTH TJ = 25 °C
1 10 100
-4.5V
20µs PULSE WIDTH TJ = 150 °C
1 10 100
1 0.1
1 0.1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
100
2.0
ID = -6.5A
-I D , Drain-to-Source Current (A)
1.5
TJ = 25 ° C TJ = 150 ° C
10
1.0
0.5
-
1
25V V DS = --50V 20µs PULSE WIDTH
4 5 6 7 8 9
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( °C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
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