Details, datasheet, quote on part number: JANTX2N6762
PartJANTX2N6762
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description500V Single N-channel Hi-rel MOSFET in a TO-204AA Package
CompanyInternational Rectifier Corp.
DatasheetDownload JANTX2N6762 datasheet
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Features, Applications

IRF430 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE [REF:MIL-PRF-19500/542] 500V, N-CHANNEL

The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling

ID @ VGS ID @ VGS = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical)

BVDSS BV DSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current

Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance

Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 1.0MHz
Input Capacitance Output Capacitance Reverse Transfer Capacitance

IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled LS + LD.
RthJC R thJA Junction to Case Junction to Ambient

 

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IRF430
JANTXV2N6762
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JANTX2N6764 100V Single N-channel Hi-rel MOSFET in a TO-204AE Package
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JANTX2N6768 400V Single N-channel Hi-rel MOSFET in a TO-204AE Package
JANTX2N6770 500V Single N-channel Hi-rel MOSFET in a TO-204AA Package
JANTX2N6782 100V Single N-channel Hi-rel MOSFET in a TO-205AF Package
JANTX2N6782U 100V Single N-channel Hi-rel MOSFET in a 18-pin LCC Package
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JANTX2N6792 400V Single N-channel Hi-rel MOSFET in a TO-205AF Package
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JANTX2N6794 500V Single N-channel Hi-rel MOSFET in a TO-205AF Package
JANTX2N6794U 500V Single N-channel Hi-rel MOSFET in a 18-pin LCC Package
JANTX2N6796 100V Single N-channel Hi-rel MOSFET in a TO-205AF Package
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