Details, datasheet, quote on part number: JANTX2N6790
PartJANTX2N6790
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description200V Single N-channel Hi-rel MOSFET in a TO-205AF Package
CompanyInternational Rectifier Corp.
DatasheetDownload JANTX2N6790 datasheet
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Features, Applications

The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling

ID @ VGS ID @ VGS = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 300 (0.063 in. (1.6mm) from case for 10s) 0.98(typical)

Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current

Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance

Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Input Capacitance Output Capacitance Reverse Transfer Capacitance

IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled LS + LD.

Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page


 

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