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Part: MBR0520
Category:
Description: 20V 0.5A Schottky Discrete Diode in a SOD-123 Package
Company: International Rectifier Corp.
Datasheet: Download MBR0520 datasheet File size : 2304 kB
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Datasheet text preview:
Preliminary Data Sheet PD-20226 01/02
MBR0520
SCHOTTKY DIODE 0.5 Amp
SOD123
Major Ratings and Characteristics Characteristics
IF(AV) DC VRRM IFSM VF TJ @ tp= 10 ms sine @0.5Apk, TJ=100°C range
Description/ Features Units
A V A V °C This Schottky diode is ideally suited for low voltage, high frequency operation, as freewheeling and polarity protection. Small size of the package allows proper use in application where compact size is critical, fitting also the GSM and PCMCIA requirement. Surface mountable Very low forward voltage drop Extremely fast switching Negligible switching losses Guard ring for enhanced ruggedness and long term reliability
Value
0.5 20 6.5 0.36 - 65 to 150
Case Styles
Device Marking: IR520
K J L B A 2
DIM A B C H J K L M
Millimeters Min 0.55 1.40 3.55 2.55 0.95 8° Max 0.70 1.70 3.85 2.85 0.10 1.35 1.35 0.15
Inches Min 0.022 0.055 0.140 0.100 0.037 Max 0.028 0.067 0.152 0.112 0.004 0.053 0.053 0.006 8°C
SOLDERING PAD
0.91 mm 0.03 6" 1.22 mm 0.04 8" 2.36 mm 0.09 3"
H 1
4.19 mm 0.16 5"
C
1
2
Outline SOD123
1
MBR0520
Preliminary Data Sheet PD-20226 01/02
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
Value
20
Absolute Maximum Ratings
Parameters
IF IFSM Max. Average Forward Current Max. Peak One Cycle Non-Repetitive Surge Current, @ 25°C
Value
0.5 55 6.5
Units
A A A
Conditions
DC, TL = 129°C 5µs Sine or 3µs Rect. pulse 10ms Sine or 6ms Rect. pulse F o l l o w i n g any rated l o a d condition and with rated VRRM applied
Electrical Specifications
Parameters
VFM VFM IRM Max. Forward Voltage Drop Max. Forward Voltage Drop Max. Reverse Leakage Current (1) (1) (1)
Value
0.375 0.440 0.260 0.360 40 3 150 7
Units
V V V V µA mA µA mA pF V/µs @ 0.1A @ 0.5A @ 0.1A @ 0.5A TJ = 25°C TJ = 100°C TJ = 25°C TJ = 100°C
Conditions
TJ = 25°C TJ = 100°C VR = 10V VR = 20V
CT
Max. Junction Capacitance (Rated VR)
110 10000
VR = 5VDC (test signal range 100KHz to 1Mhz), TJ = 25°C
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Storage Temperature Range
Value
- 65 to 150 150 200 0.012
Units
°C °C
Conditions
Max. Junction Temperature Range (*) - 65 to 150
RthJL Max. Thermal Resistance Junction to Lead RthJA Max. Thermal Resistance Junction to Ambient Wt Approximate Weight Case Style Device Marking
°C/W Mounted on PC board FR4 with minimum pad size °C/W 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board gr
SOD123 IR520
(*) dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth( j-a)
2
MBR0520
Preliminary Data Sheet PD-20226 01/02
100
Tj = 150°C
10
10
Reverse Current - I R (mA)
125°C 100°C 75°C
1 0.1 0.01 0.001 0.0001
0
50°C 25°C
Instantaneous Forward Current - I F (A)
1
5 10 15 20 Reverse Voltage - V R (V)
25
Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
Tj = 150°C Tj = 100°C
0.1
Tj = 25°C
1000
Junction Capacitance - C T (pF)
T = 25°C J
100
0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 0 5 10 15 20 25
Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
3
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