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Part: MBR0540
Category:
Description: 40V 0.5A Schottky Discrete Diode in a SOD-123 Package
Company: International Rectifier Corp.
Datasheet: Download MBR0540 datasheet File size : 2304 kB
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Preliminary Data Sheet PD-20203 12/01
MBR0540
SCHOTTKY DIODE 0.5 Amp
SOD123
Major Ratings and Characteristics Characteristics
IF(AV) (DC) VRRM IFSM VF TJ @ tp= 10 ms sine @0.5Apk, TJ=100°C range
Description/ Features Units
A V A V °C This Schottky diode is ideally suited for low voltage, high frequency operation, as freewheeling and polarity protection. Small size of the package allows proper use in application where compact size is critical, fitting also the GSM and PCMCIA requirement. Surface mountable Very low forward voltage drop Extremely fast switching Negligible switching losses Guard ring for enhanced ruggedness and long term reliability
Value
0.5 40 6.0 0.42 - 65 to 150
Case Styles
Device Marking: IR540
K J L B A
SOLDERING PAD
DIM A B C H J K L M
Millimeters Min 0.55 1.40 3.55 2.55 0.95 8° Max 0.70 1.70 3.85 2.85 0.10 1.35 1.35 0.15
Inches Min 0.022 0.055 0.140 0.100 0.037 Max 0.028 0.067 0.152 0.112 0.004 0.053 0.053 0.006 8°C
2
0.91 mm 0.03 6" 1.22 mm 0.04 8" 2.36 mm 0.09 3"
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H
C
1
4.19 mm 0.16 5"
(A)
1
2
(K)
Outline SOD123
1
MBR0540
Preliminary Data Sheet PD-20203 12/01
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
Value
40
Absolute Maximum Ratings
Parameters
IF IFSM Forward Current Max. Peak One Cycle Non-Repetitive Surge Current, @ TJ = 25°C
Value
0.5 50 6.0
Units
A A A
Conditions
DC, TL = 122°C 5µs Sine or 3µs Rect. pulse 10ms Sine or 6ms Rect. pulse F o l l o w i n g any rated l o a d condition and with rated VRRM applied
Electrical Specifications
Parameters
VFM VFM IRM Max. Forward Voltage Drop Max. Forward Voltage Drop Max. Reverse Leakage Current (1) (1) (1)
Value
0.480 0.560 0.420 0.520 10 5 20 13
Units
V V V V µA mA µA mA pF V/µs @ 0.5A @ 1A @ 0.5A @ 1A VR = 20V VR = 20V VR = 40V VR = 40V
Conditions
TJ = 25°C TJ = 100°C TJ = 25°C TJ = 100°C TJ = 25°C TJ = 100°C
CT
Max. Junction Capacitance (Rated VR)
60 10000
VR = 5VDC (test signal range 100KHz to 1Mhz), TJ = 25°C
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Storage Temperature Range
Value
- 65 to 150 150 200 0.012
Units
°C °C
Conditions
Max. Junction Temperature Range (*) - 65 to 150
RthJL Max. Thermal Resistance Junction to Lead Rth(j-a) Max. Thermal Resistance Junction to Ambient Wt Approximate Weight Case Style Device Marking
°C/W Mounted on PC board FR4 with minimum pad size °C/W 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board g
SOD123 IR540
(*) dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth( j-a)
2
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MBR0540
Preliminary Data Sheet PD-20203 12/01
100 10 1 0.1 0.01 0.001
Instantaneous Forward Current - I F (A)
Tj = 150°C 125°C 100°C 75°C 50°C 25°C
10
1
Reverse Current - I R (mA)
0.0001 0 5 10 15 20 25 30 35 40
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage (Per Leg)
0.1
Tj = 150°C Tj = 125°C Tj = 25°C
Junction Capacitance - C T (p F)
1000
T = 25°C
J
100
0.01 0 0.2 0.4 0.6 0.8 1
Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics (Per Leg)
10 0 10 20 30 40
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage (Per Leg)
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3
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