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Details, datasheet, quote on part number:MUR820
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| Part: | MUR820 |
| Category: | Discrete => Diodes & Rectifiers => Fast Recovery Diodes |
| Description: | Ultrafast Rectifier |
| Company: | International Rectifier Corp. |
| Datasheet: | Download MUR820 datasheet File size : 194 kB |
| Request For quote: | Find where to buy MUR820
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Datasheet text preview:
Bulletin PD-20731 rev. B 01/01
MUR820 MURB820 MURB820-1
Ultrafast Rectifier
Features
· · · · Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature
trr = 25ns IF(AV) = 8Amp VR = 200V
Description/ Applications International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultra fast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
Absolute Maximum Ratings Parameters
V RRM IF(AV) IFSM IF M TJ, TSTG Peak Repetitive Peak Reverse Voltage Average Rectified Forward Current Total Device, (Rated VR ), TC = 150°C Non Repetitive Peak Surge Current Peak Repetitive Forward Current (Rated VR , Square wave, 20 KHz), TC = 150°C Operating Junction and Storage Temperatures -65 to 175 °C 100 16
Max
200 8
Units
V A
Case Styles
MUR820
MURB820
MURB820-1
TO-220AC www.irf.com
D 2P A K
TO-262 1
MUR820, MURB820, MURB820-1
Bulletin PD-20731 rev. B 01/01
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max Units Test Conditions
200 25 8.0 0.975 0.895 5 250 V V V µA µA pF nH IR = 100µA IF = 8A IF = 8A, TJ = 150°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 200V Measured lead to lead 5mm from package body .
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Inductance
-
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
trr Reverse Recovery Time
Min Typ Max Units Test Conditions
-
20 34
35 25 -
ns
IF = 1.0A, diF/dt = 50A/µs, VR = 30V IF = 0.5A, IR = 1.0A, IREC = 0.25A TJ = 25°C TJ = 125°C IF = 8A VR = 160V diF /dt = 200A/µs
IRRM
Peak Recovery Current
-
1.7 4.2 23 75
-
A
TJ = 25°C TJ = 125°C
Qrr
Reverse Recovery Charge
-
nC
TJ = 25°C TJ = 125°C
Thermal - Mechanical Characteristics
Parameters
TJ T Stg RthJC RthJA ! RthCS Wt
"
Min
-
Typ
0.5 2.0 0.07 -
Max
- 65 to 175 - 65 to 175 3.0 50 12 10
Units
°C
Max. Junction Temperature Range Max. Storage Temperature Range Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heatsink Weight
°C/ W
g (oz) Kg-cm lbf.in
Mounting Torque
6.0 5.0
! Typical Socket Mount "# Mounting Surface, Flat, Smooth and Greased
2
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MUR820, MURB820, MURB820-1
Bulletin PD-20731 rev. B 01/01
100
100
T J = 175°C 150°C
Reverse Current - I R (µA)
10
1
125°C 100°C
0.1
25°C
10
Instantaneous Forward Current - I F (A)
T = 175°C
J
0.01
0.001 0 50 100 150 200 250
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
TJ = 150°C TJ = 25°C
1000
1
Junction Capacitance - C T (pF)
T = 25°C J
100
0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward Voltage Drop - VFM (V)
10 1 10 100 1000
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
Thermal Impedance Z thJC (°C/W)
1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
Notes:
PDM
t1 t2 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.1
Single Pulse (Thermal Resistance)
0.01 0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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3
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