Digchip : Database on electronics components
Electronic components database
Search:                      In section:
Member, Distributor  
Log In
Email:
Password:

Details, datasheet, quote on part number:MURS120TR
 
 
Part:MURS120TR
Category:Discrete
Description:200V 1A Hexfred Discrete Diode in a SMB Package
Company:International Rectifier Corp.
Datasheet:Download MURS120TR datasheet   File size : 96 kB
Request For quote:  Find where to buy MURS120TR
 



Datasheet text preview:
Bulletin PD-20753 rev. E 05/02
MURS120
Ultrafast Rectifier
Features
· · · · Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature
SMB
trr = 25ns IF(AV) = 1Amp VR = 200V
Description/ Applications International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultra fast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-wheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
Absolute Maximum Ratings Parameters
VRRM IF(AV) IFSM TJ, TSTG Peak Repetitive Peak Reverse Voltage Average Rectified Forward Current, T L = 158°C Non Repetitive Peak Surge Current Operating Junction and Storage Temperatures
Max
200 1 40 - 65 to 175
Units
V A °C
Device Marking: IRU120
CATHODE
ANODE
2.15 (.085) 1.80 (.071)
3.80 (.150) 3.30 (.130)
1
2
4.70 (.185) 4.10 (.161)
1 POLARITY
2 PART NUMBER
2.40 (.094) 1.90 (.075) 1.30 (.051) 0.76 (.030) 0.30 (.012) 0.15 (.006) 5.60 (.220) 5.00 (.197)
2.5 TYP. (.098 TYP.)
SOLDERING PAD
2.0 TYP. (.079 TYP.)
4.2 (.165) 4.0 (.157)
Outline SMB Dimensions in millimeters and (inches)
www.irf.com
1
MURS120
Bulletin PD-20753 rev. E 05/02
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max Units Test Conditions
200 V V V µA µA pF I R = 100µA I F = 1A I F = 1A, TJ = 150°C V R = VR Rated T J = 150°C, VR = VR Rated V R = 200V
0.83 0.875 0.65 0.71 0.1 11 12 2 50 -
IR
Reverse Leakage Current
-
CT
Junction Capacitance
-
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
t rr Reverse Recovery Time
Min Typ Max Units Test Conditions
35 25 ns I F = 1.0A, di F /dt = 50A/µs, V R = 30V I F = 0.5A, I R = 1.0A, I R E C = 0.25A
Thermal - Mechanical Characteristics
Parameters
TJ TStg RthJL Wt Max. Junction Temperature Range Max. Storage Temperature Range Thermal Resistance, Junction to Lead Weight
Min
- 65 -
Typ
0.1 0.07 0.10 (0.003) SMB IRU120
Max
175 175 21 -
Units
°C
°C/W g (oz) g (oz.)
wt
Approximate Weight Case Style Device Marking
2
www.irf.com
MURS120
Bulletin PD-20753 rev. E 05/02
10
Reverse Current - I R (µA)
100 10 1 0.1
Tj = 175°C 150°C 125°C 100°C 75°C 50°C 25°C
Instantaneous Forward Current - I F (A)
0.01
T = 175°C J
0.001 0 50 100 150 200
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
1
T = 150°C J T = 25°C J
100
Junction Capacitance - C T (pF)
Tj = 25°C
0.1 0.4
0.6
0.8
1
1.2
1.4
10 0 40 80 120 160 200 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
100
(°C/W)
10
Thermal Impedance Z
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
Notes:
thJL
PDM
t1 t2
1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC+ Tc
1
0.1 0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
www.irf.com
3