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Details, datasheet, quote on part number:OM6112SA
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Datasheet text preview:
OM6009SA OM6011SA OM6109SA OM6111SA OM6010SA OM6012SA OM6110SA OM6112SA
POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE
100V Thru 500V, Up To 22 Amp, N-Channel MOSFET In Hermetic Metal Package, With Optional Zener Gate Clamp Protection FEATURES
· · · · · · Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels Bi-Lateral Zener Gate Protection (Optional) Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications s u c h as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. The MOSFET gates are protected using bi-lateral zeners in the OM6109SA series.
MAXIMUM RATINGS
PART NUMBER OM6009SA, OM6109SA OM6010SA, OM6110SA OM6011SA, OM6111SA OM6012SA, OM6112SA VDS 100V 200V 400V 500V RDS(ON) .095 .18 .55 .85 ID(MAX) 22A 18A 10A 8A
3.1
Note: OM61XX Series include gate protection circuitry.
SCHEMATIC
POWER RATING
4 11 R3 Supersedes 1 07 R2
3.1 - 79
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6009SA / OM6109SA
Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Gate-Body Leakage (OM6109) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 .130 .155 VGS = 10 V, ID = 15 A, TC = 125 C .085 .095 VGS = 10 V, ID = 15 A 22 1.275 1.425 0.1 0.2 2.0 4.0 100 -100 ± 500 0.25 1.0 V nA nA nA mA mA A V Min. Typ. Max. Units Test Conditions 100 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VGS = ± 12.8 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 15 A
3.1
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6010SA / OM6110SA
Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Gate-Body Leakage (OM6110) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 0.28 0.36 VGS = 10 V, ID = 10 A, TC = 125 C 0.14 0.18 VGS = 10 V, ID = 10 A 18 1.4 1.8 0.1 0.2 2.0 4.0 100 - 100 ± 500 0.25 1.0 V nA nA nA mA mA A V Min. Typ. Max. Units Test Conditions 200 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VGS = ± 12.8 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 10 A VDS(on) Static Drain-Source On-State
OM6009SA - OM6112SA
VDS(on) Static Drain-Source On-State
gfs Ciss Coss Crss Td(on) tr Td(off) tf
10.0 1275 550 160 16 19 42 24
S(W ) VDS 2 VDS(on), ID = 15 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 30 V, ID = 5 A Rg = 5 W , VGS = 10 V
(MOSFET) switching times are essentially independent of operating temperature.
gfs Ciss Coss Crss Td(on) tr Td(off) tf
6.0 1000 250 100 17 52 36 30
S(W ) VDS 2 VDS(on), ID = 10 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 75 V, ID @ 18 A Rg = 5 W , VGS = 10 V
(MOSFET) switching times are essentially independent of operating temperature.
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 200 - 2.5 V ns - 108 A - 27 A
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350
- 18 - 72 -2
A A V ns
TC = 25 C, IS = -24 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms
VSD trr
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(W )
(W )
3.1 - 80
DYNAMIC
Forward Transductance1
DYNAMIC
Forward Transductance1
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G
D
S
TC = 25 C, IS = -18 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6011SA / OM6111SA
Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Gate-Body Leakage (OM6111) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 0.93 1.10 VGS = 10 V, ID = 5 A, TC = 125 C 0.47 0.55 VGS = 10 V, ID = 5 A 10 2.35 2.75 0.1 0.2 2.0 4.0 100 -100 ± 500 0.25 1.0 V nA nA nA mA mA A V Min. Typ. Max. Units Test Conditions 400 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VGS = ± 12.8 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 5 A
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6012SA / OM6112SA
Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Gate-Body Leakage (OM6112) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 1.50 1.65 VGS = 10 V, ID = 4 A, TC = 125 C 0.8 0.85 VGS = 10 V, ID = 4 A 8.0 3.2 3.4 0.1 0.2 2.0 4.0 100 - 100 ± 500 0.25 1.0 V nA nA nA mA mA A V Min. Typ. Max. Units Test Conditions 500 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VGS = ± 12.8 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 4 A VDS(on) Static Drain-Source On-State
VDS(on) Static Drain-Source On-State
gfs Ciss Coss Crss Td(on) tr Td(off) tf
4.0 1150 165 70 17 12 45 30
S(W ) VDS 2 VDS(on), ID = 5 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 175 V, ID @ 5 A Rg = 5 W , VGS = 10 V
(MOSFET) switching times are essentially independent of operating temperature.
gfs Ciss Coss Crss Td(on) tr Td(off) tf
4.0 1275 200 85 17 5 42 14
S(W ) VDS 2 VDS(on), ID = 4 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 200 V, ID = 4 A Rg = 5 W , VGS = 10 V
(MOSFET) switching times are essentially independent of operating temperature.
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 530 -2 V ns - 40 A - 10 A
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700
-8 - 32 -2
A A V ns
TC = 25 C, IS = -10 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms
VSD trr
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(W )
(W )
3.1 - 81
DYNAMIC
Forward Transductance1
DYNAMIC
Forward Transductance1
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G
D
OM6009SA - OM6112SA
S
TC = 25 C, IS = -18 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms
3.1
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