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Details, datasheet, quote on part number:OM6505SA
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Datasheet text preview:
OM6505SA OM6506SA
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
500 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package
FEATURES
· · · · · · · · Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Available Screened To MIL-S-19500, TX, TXV And S Levels Low Conductive Losses Ceramic Feedthroughs Available
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART NUMBER OM6505SA OM6506SA IC (Cont.) @ 90°C, A 15 20 V(BR)CES V 500 500 VCE (sat) (Typ.) V 2.8 2.8 Tf (Typ.) ns 400 400 qJC °C/W 1.75 1.00 PD W 72 125 TJ °C 150 150
3.1
SCHEMATIC
Collector
MECHANICAL OUTLINE
.144 DIA. .545 .535 .050 .040
.685 .665
.800 .790
.550 .530
1 C
2 E
3 G
Gate
PIN CONNECTION
Pin 1: Collector Pin 2: Emitter Pin 3: Gate
.550 .510 .045 .035 .150 TYP. .260 .249 .005
Emitter
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number. Example - OMXXXXCSA. IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2 Supersedes 2 07 R1
3.1 - 143
3.1
PRELIMINARY DATA: OM6506SA
IGBT CHARACTERISTICS Min. Typ. Max. Units Test Conditions 500 0.25 1.0 ±100 V mA mA nA VCE = 0 IC = 250 µA VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 0 TC = 125°C IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr tr(Volt) tf tcross Eoff Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Off Voltage Rise Time Fall Time Cross-Over Time Turn-Off Losses 5.0 1700 215 115 60 240 .55 .60 1.2 3.0 S pF pF pF nS nS µS µS µS mJ VCE = 20 V, IC = 15 A VGE = 0 VCE = 25 V f = 1 mHz VCC = 400 V, IC = 15 A VGE = 15 V, Rg = 47 VCEclamp = 400 V, IC = 15 A VGE = 15 V, Rg = 100 L = 0.1 mH, Tj = 100°C 2.8 3.0 V 2.0 3.0 4.0 V V VCE = VGE, IC = 250 µA VGE = 15 V, IC = 15 A TC = 25°C VGE = 15 V, IC = 15 A TC = 100°C gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tr VCE(sat) Collector Emitter VGE = ±20 V VCE = 0 V VGE(th) IGES Gate Emitter Leakage Current Parameter - ON Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Current Fall Time 8.0 3500 250 50 100 200 1.0 2.0 1.0 3.0 S pF pF pF nS nS µS µS nS µS VCEclamp = 400 V, IC = 20 A VGE = 15 V, Rg = 100 L = 0.1 mH, Tj = 125°C VCE = 15 V, IC = 20 A VGE = 0 VCE = 25 V f = 1 mHz VCC = 400 V, IC = 20 A VGE = 15 V, Rg = 100 Tj = 125°C 2.8 3.0 V 2.0 3.0 4.0 V V VCE = VGE, IC = 250 µA VGE = 15 V, IC = 20 A TC = 25°C VGE = 15 V, IC = 20 A TC = 100°C VCE(sat) Collector Emitter ±100 nA ICES Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage Zero Gate Voltage Drain Current 0.25 1.0 mA mA Min. Typ. Max. Units Test Conditions 500 V VCE = 0 IC = 250 µA VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 0 TC = 100°C VGE = ±20 V VCE = 0 V
OM6505SA - OM6506SA
PRELIMINARY DATA: OM6505SA
IGBT CHARACTERISTICS Parameter - OFF V(BR)CES Collector Emitter
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Breakdown Voltage ICES Zero Gate Voltage Drain Current
Switching-Resistive Load
Switching-Resistive Load
Switching-Inductive Load
Switching-Inductive Load
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