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Details, datasheet, quote on part number:P402W
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| Part: | P402W |
| Category: | Discrete |
| Description: | 600V 40A 2 SCR Traverse Bridge With Free Wheeling Diode in a Pace-pak Package |
| Company: | International Rectifier Corp. |
| Datasheet: | Download P402W datasheet File size : 90 kB |
| Request For quote: | Find where to buy P402W
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Datasheet text preview:
Bulletin I2776 rev. E 04/99
P400 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features
G l a s s passivated junctions for greater reliability E l e c t r i c a l l y isolated base plate A v a i l a b l e up to 1200 V R R M , V D R M H i g h dynamic characteristics W i d e choice of circuit configurations S i m p l i f i e d mechanical design and assembly U L E78996 approved
40A
Description
T h e P400 series of Integrated Power Circuits cons i s t s of power thyristors and power diodes c o n f i g u r e d in a single package. With its isolating b a s e plate, mechanical designs are greatly simplif i e d giving advantages of cost reduction and r e d u c e d size. A p p l i c a t i o n s include power supplies, control circ u i t s and battery chargers.
Major Ratings and Characteristics
Parameters
ID @ TC IFSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz I2t VRRM VINS TJ
P400
40 80 385 400 745 680 7450 400 to 1200 2500 - 40 to 125
Units
A °C A A A2s A2 s A2 s V V °C
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P400 Series
Bulletin I2776 rev. E 04/99
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number VRRM maximum repetitive VRSM maximum nonVDRM maximum peak reverse voltage repetitive peak reverse repetitive peak off-state voltage voltage V V V
400 600 800 1000 1200 500 700 900 1100 1300 400 600 800 1000 1200
IRRM max.
@ TJ max.
mA
10
P401, P421, P431 P402, P422, P432 P403, P423, P433 P404, P424, P434 P405, P425, P435
On-state Conduction
Parameter
ID I TSM I FSM M a x i m u m DC output current Max. peak one-cycle non-repetitive on-state or forward current
P400
40 385 400 325 340
Units Conditions
A A @ TC = 80°C, full bridge circuits t = 10ms t = 8.3ms t = 10ms t = 8.3ms As
2
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
It
2
Maximum I2t for fusing
745 680 530 480
t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
7450
A2s
t = 0.1 to 10ms, no voltage reapplied I 2t for time tx = I 2 t . tx
V T ( T O ) 1 Low value of threshold voltage V T ( T O ) 2 High value of threshold voltage r t1 Low level value of on-state slope resistance r t2 High level value of on-state
0.83 1.03 9.61 m 7.01 V
(16.7% x x IT(AV) x I T(AV)), TJ = TJ max. (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max.
slope resistance V TM V FM di/dt Max. peak on-state or forward voltage drop Maximum non repetitive rate of rise of turned on current IH IL Maximum holding current Maximum latching current 200 130 250 A/µs mA mA 1.4 V
(I > x I T(AV)), TJ = TJ max. TJ = 25°C, ITM = x I T(AV) TJ = 25°C, ITM = x I F(AV) TJ = 125°C from 0.67 VDRM ITM = x I T(AV), Ig = 500mA, tr 6µs TJ = 25°C anode supply = 6V, resistive load TJ = 25°C anode supply = 6V, resistive load
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P400 Series
Bulletin I2776 rev. E 04/99
Blocking
Parameter
dv/dt Maximum critical rate of rise of 200 off-state voltage I RRM I DRM I RRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM Max peak reverse leakage current 10 100 mA µA TJ = 125°C, gate open circuit TJ = 25°C 50Hz, circuit to base, all terminal shorted, RMS isolation voltage 2500 V TJ = 25°C, t = 1s V/ µ s TJ = 125°C, exponential to 0.67 VDRM gate open
P400
Units Conditions
Triggering
Parameter
PGM IGM - VG M Maximum peak gate power
P400
8 2 2 10 3 2 1
Units Conditions
W A
PG(AV) Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage VGT Maximum gate voltage required to trigger
V
T J = - 40°C T J = 25°C T J = 125°C T J = - 40°C Anode Supply = 6V resistive load
IGD
Maximum gate current required to trigger
90 60 35 mA
T J = 25°C T J = 125°C
Anode Supply = 6V resistive load
VGD
Maximum gate voltage that will not trigger 0.2 V TJ = 125°C, rated VDRM applied
IGD
Maximum gate current that will not trigger 2 mA TJ = 125°C, rated VDRM applied
Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
P400
- 4 0 to 125
Units
°C
Conditions
- 4 0 to 125 1.05 K/W DC operation per junction
Rt h J C Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, base to heatsink
0.10
K/W
Mounting surface, smooth and greased
A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound
4
Nm
wt
Approximate weight
58 (2.0)
g (oz)
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