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Part: ST2100C32R0
Category:
Discrete
Description: 3200V 1770A Phase Control SCR in a A-36 (R-Puk) Package
Company: International Rectifier Corp.
Datasheet: Download ST2100C32R0 datasheet File size : 99 kB
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Datasheet text preview:
Bulletin I25198 rev. B 02/00
ST2100C..R SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
D o u b l e side cooling H i g h surge capability H i g h mean current F a t i g u e free
2090A
Typical Applications
D C motor controls C o n t r o l l e d DC power supplies A C controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz VD R M / VR R M tq TJ typical max.
(R-PUK)
Units
A °C A °C A °C A A KA2s KA2s V µs °C
ST2100C..R
1770 80 2090 55 3850 25 36250 38000 6570 5990 3000 to 4200 500 125
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code
30 32 ST2100C..R 34 36 38 40 42
V D R M/ V R R M, max. repetitive peak and off-state voltage V
3000 3200 3400 3600 3800 4000 4200
VRSM , maximum nonrepetitive peak voltage V
3100 3300 3500 3700 3900 4100 4300
I D R M / IRRM max.
@ TC = 125°C
mA
250
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature IT ( A V ) Max. average on-state current @ Heatsink temperature I T ( R M S ) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current
ST2100C..R
1770 (1150) 80 2090 (940) 55 (85) 3850 36250 38000 29000 30350
Units
A °C A °C A
Conditions
180 ° conduction, half sine wave double side (single side [anode side]) cooled
DC @ 25°C heatsink temperature double side cooled t = 10ms No voltage reapplied 50% VRRM reapplied No voltage reapplied 50% VRRM reapplied Sinusoidal half wave, Initial TC = 125°C t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms TJ = TJ max. T J = TJ max. I = 2900A, TC = 25°C
pk
A
I 2t
Maximum I2t for fusing
6570 5990 4205 3820 KA s
2
V T(TO) Max. value of threshold voltage rt V TM IL Max. value of on-state slope resistance Max. on-state voltage Typical latching current
1.03 0.32 1.875 300
V m V mA
T J = 25°C, VD = 5V
Switching
Parameter
di/dt Max. repetitive 50Hz (no repetitive) rate of rise of turned-on current t Maximum delay time 150 (300) 2.5 µs t
q
ST2100C..R
Units Conditions
A/µs From 67% VDRM to 1000A gate drive 20V, 10, tr = 0.5µs TJ = TJ max. Gate drive 30V, 15, Vd = 67% VDRM, T J = 25°C Rise time 0.5µs IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V,
p
d
Typical turn-off time
500
dIRR/dt = 2A/µs, VDR = 67% VDRM, dVDR/dt = 8V/µs linear
2
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
Blocking
Parameter
dv/dt I RRM I DRM Maximum linear rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST2100C..R
500 250
Units
V/µs mA
Conditions
TJ = TJ max. to 67% rated VDRM TJ = 125°C rated VD R M /V R R M applied
Triggering
Parameter
PG M PG(AV) IG M VG M -V G M IGT VGT Maximum peak gate power Maximum average gate power Max. peak positive gate current Max. peak positive gate voltage Max. peak negative gate voltage Maximum DC gate current required to trigger Maximum gate voltage required to trigger
ST2100C..R
150 10 30 30 0.25 400
Units
W A V V mA
Conditions
t = 100µs
p
Anode positive with respect to cathode Anode positive with respect to cathode Anode positive with respect to cathode TC = 25°C, VDRM = 5V TC = 25°C, VDRM = 5V Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied
4
V
VGD
DC gate voltage not to trigger
0.25
V
TC = 125°C
Thermal and Mechanical Specification
Parameter
TJ max. Max. operating temperature Tstg R thJ-C Max. storage temperature range Thermal resistance, junction to case Rth(C-h) Thermal resistance, case to heatsink F wt Mounting force ± 10% Approximate weight Case style
ST2100C..R
125 - 5 5 to 125 0.019 0.0095 0.004 0.002 43000 (4400) 1600 (R-PUK)
Units
°C K/W K/W N (Kg) g
Conditions
On-state (conducting)
DC operation single side cooled DC operation double side cooled Single side cooled Double side cooled Clamping force 43KN with mounting compound
See Outline Table
RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
180° 1 2 0° 60°
Single side
0.0010 0.0017 0.0044
Double side
0.0010 0.0017 0.0044
Units
K/W
Conditions
TJ = TJ max.
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