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Details, datasheet, quote on part number: 5962F0152101QXC
Part number5962F0152101QXC
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs
DescriptionRadiation Hardened 9a, Non-inverting Power MOSFET Drivers
CompanyIntersil Corporation
DatasheetDownload 5962F0152101QXC datasheet
Request For QuoteFind where to buy 5962F0152101QXC

Specifications, Features, Applications

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Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers

The Radiation Hardened is a non-inverting, monolithic high-speed MOSFET driver designed to convert a 5V CMOS level input signal into a high current output at voltages to 18V. Its fast rise times and high current output allow very quick control of even the largest power MOSFETs in high frequency applications. The input of the ISL4422ARH can be directly driven by our HS-1825ARH and IS-1845ASRH PWM devices. The 9A high current output minimizes power losses in MOSFETs by rapidly charging and discharging high gate capacitances. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-01521. A "hot-link" is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp


· QML Qualified per MIL-PRF-38535 Requirements· Electrically Screened to DSCC SMD # 5962-01521· Radiation Environment - Total Dose (Max). 300krad(SI) - Latch-Up Immune - Negligible Sensitivity to Low Dose Rates· IPEAK.9A(Min)· TF (CL 90ns(Max)· TR (CL 90ns(Typ); 105ns(Max)· Prop Delay High-Low (CL 75ns(Max) 55ns(Typ)· Prop Delay Low-High (CL 50ns(Max) 30ns(Typ)· Consistent Delay Times with VCC Changes· Wide Supply Voltage Range. to 18V· Low Stand-by Power Consumption - Input Low. <2mW(Max) - Inputs High. <18mW(Max)· ESD Protected.>1750V

· Switching Power Supplies· DC/DC Converters· Motor Controllers


NOTES: 1. Pin 3 provides the supply voltage for the control logic. It is not internally connected to Pins 15 and 16 for noise immunity purposes, but may be connected externally. 2. Pin 5 is the control logic return. It is not internally connected to Pins 8 and 9 for noise immunity purposes, but may be connected externally. 3. Pins 8 and 9 MUST both be connected to GND. 4. Pins 12 and 13 MUST both be connected to the output. 5. Pins 15 and 16 MUST both be connected to VS.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Intersil and Design is a trademark of Intersil Americas Inc. Copyright İ Intersil Americas Inc. 2001, All Rights Reserved

DIE DIMENSIONS: 4829µm (151.1 mils x 190.1mils) Thickness: 25.4µm (19 mils ħ 1 mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: ħ 1.0kĊ Top Metallization: Type: AlSiCu Thickness: ħ 2kĊ Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: x 105 A/cm 2 Transistor Count: 30

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com 2

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