|Category||Analog & Mixed-Signal Processing => Amplifiers => Differential Amplifiers|
|Description||Radiation Hardened Quad Differential Line Driver|
|Datasheet||Download 5962F9563201QEC datasheet
|Cross ref.||Similar parts: AM26C31M, AM26LS31, AM26LS31M, DS26C31MQML, DS26C31T, DS26LS31C, DS26LS31MQML, DS26LS31MQML-SP, DS96F172MQML, DS96F174MQML|
Radiation Hardened Quad Differential Line Driver
The Intersil is a quad differential line driver designed for digital data transmission over balanced lines and meets the requirements of EIA standard RS-422. Radiation hardened CMOS processing assures low power consumption, high speed, and reliable operation in the most severe radiation environments. The HS-26CT31RH accepts TTL signal levels and converts them to RS-422 compatible outputs. This circuit uses special outputs that enable the drivers to power down without loading down the bus. Enable and disable pins allow several devices to be connected to the same data source and addressed independently. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95632. A "hot-link" is provided on our homepage for downloading. http://www.intersil.com/spacedefense/space.htmFeatures
Electronically Screened to SMD #5962-95632 QML Qualified Per MIL-PRF-38535 Requirements 1.2 Micron Radiation Hardened CMOS Total Dose to 300kRAD(Si) Latchup Free EIA RS-422 Compatible Outputs (Except for IOS) TTL Compatible Inputs High Impedance Outputs when Disabled or Powered Down Low Power Dissipation 2.75mW Standby (Max) Single 5V Supply Low Output Impedance 10 or Less Full to +125oC Military Temperature RangeINTERNAL MKT. NUMBER HS1-26CT31RH-Q HS9-26CT31RH-Q TEMP. RANGE (oC) to 125
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com 407-727-9207 | Copyright © Intersil Corporation 1999
DIE DIMENSIONS: 96.5 mils x 195 mils x 21 mils x 4950) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorus Silicon Glass) Thickness: 10kÅ ±1kÅ Metallization: M1: Mo/TiW Thickness: 5800Å M2: Al/Si/Cu (Top) Thickness: 10kÅ ±1kÅ Substrate: AVLSI1RA Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): VDD ADDITIONAL INFORMATION: Worst Case Current Density: x 105A/cm2 Bond Pad Size: x 100µm
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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