Details, datasheet, quote on part number: 5962F9666301QEC
CategoryAnalog & Mixed-Signal Processing => Amplifiers => Differential Amplifiers
DescriptionRadiation Hardened Quad Differential Line Driver
CompanyIntersil Corporation
DatasheetDownload 5962F9666301QEC datasheet
Cross ref.Similar parts: AM26C31CN, DS26C31MJ/883, DS26C31TN/NOPB, AM26C31-EP, AM26C32, AM26C32-EP, AM26C32M, AM26LS31, AM26LS31M, AM26LS32A
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Features, Applications

Radiation Hardened Quad Differential Line Driver

The Intersil is a quad differential line driver designed for digital data transmission over balanced lines and meets the requirements of EIA standard RS-422. Radiation hardened CMOS processing assures low power consumption, high speed, and reliable operation in the most severe radiation environments. The HS-26C31RH accepts CMOS signal levels and converts them to RS-422 compatible outputs. This circuit uses special outputs that enable the drivers to power down without loading down the bus. Enable and disable pins allow several devices to be connected to the same data source and addressed independently. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-96663. A "hot-link" is provided on our homepage for downloading.


Electrically Screened to SMD # 5962-96663 QML Qualified per MIL-PRF-38535 Requirements 1.2 Micron Radiation Hardened CMOS - Total Dose Up to. 300kRAD(Si) - Dose Rate Upset. > 1x109 RAD/s (20ns Pulse) Latchup Free EIA RS-422 Compatible Outputs (Except for IOS) CMOS Inputs High Impedance Outputs when Disabled or Powered Down Low Power Dissipation. 2.75mW Standby (Max) Single 5V Supply Low Output Impedance. 10 or Less Full to 125oC Military Temperature Range


CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 407-727-9207 | Copyright Intersil Corporation 1999

DIE DIMENSIONS: 96.5 mils x 195 mils x 21 mils x 4950) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorus Silicon Glass) Thickness: 10k 1k Metallization: M1: Mo/TiW Thickness: 5800 M2: Al/Si/Cu (Top) Thickness: 10k 1k Substrate: AVLSI1RA Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): VDD ADDITIONAL INFORMATION: Worst Case Current Density: x 105A/cm2 Bond Pad Size: x 100m

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site


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