Details, datasheet, quote on part number: 5962F9764101VEA
CategoryDiscrete => Transistors => Bipolar => Audio Amplifier Application => NPN
DescriptionRadiation Hardened Ultra High Frequency NPN Transistor Array
CompanyIntersil Corporation
DatasheetDownload 5962F9764101VEA datasheet


Features, Applications

Radiation Hardened Ultra High Frequency NPN Transistor Array

The is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. The high FT (8GHz) and low noise figure (3.5dB) of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the five transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-97641. A "hot-link" is provided on our homepage for downloading.


Electrically Screened to SMD # 5962-97641 QML Qualified per MIL-PRF-38535 Requirements Radiation Environment - Gamma Dose 105RAD(Si) - SEL Immune. Bonded Wafer Dielectric Isolation Gain Bandwidth Product (FT).8GHz (Typ) Current Gain (hFE). 70 (Typ) Early Voltage (VA). 50V (Typ) Noise Figure at 1GHz.3.5dB (Typ) Collector-to-Collector Leakage. <1pA (Typ)


High Frequency Amplifiers and Mixers - Refer to Application Note 9315 High Frequency Converters Synchronous Detectors


CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright Intersil Corporation 1999

DIE DIMENSIONS: 52 mils x 52.8 mils x 15 mils 1 mil 381m 25.4m INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 4k 0.5k Top Metallization: Type: Metal 1: AlCu (2%)/TiW Thickness: Metal 8k 0.5k Type: Metal 2: AlCu (2%) Thickness: Metal 16k 0.8k Substrate: UHF-1X Bonded Wafer, DI Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Floating ADDITIONAL INFORMATION: Worst Case Current Density: x 105A/cm2 Transistor Count: 5

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site


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